Abstract
A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core-shell nanowire array. Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency. (Abstract Copyright [2005], Wiley Periodicals, Inc.)
Levy-Clement, C;
Katty, A;
[1]
Tena-Zaera, R;
[1]
University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot (Spain)];
Ryan, M A;
[1]
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States)];
Hodes, G;
[1]
Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot (Israel)]
- LCMTR, CNRS, 2/8 rue Henri Dunant, 94320 Thiais (France)
Citation Formats
Levy-Clement, C, Katty, A, Tena-Zaera, R, University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot (Spain)], Ryan, M A, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States)], Hodes, G, and Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot (Israel)].
CdSe-sensitized p-CuSCN/nanowire n-ZnO heterojunctions.
Germany: N. p.,
2005.
Web.
doi:10.1002/adma.200401848.
Levy-Clement, C, Katty, A, Tena-Zaera, R, University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot (Spain)], Ryan, M A, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States)], Hodes, G, & Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot (Israel)].
CdSe-sensitized p-CuSCN/nanowire n-ZnO heterojunctions.
Germany.
https://doi.org/10.1002/adma.200401848
Levy-Clement, C, Katty, A, Tena-Zaera, R, University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot (Spain)], Ryan, M A, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States)], Hodes, G, and Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot (Israel)].
2005.
"CdSe-sensitized p-CuSCN/nanowire n-ZnO heterojunctions."
Germany.
https://doi.org/10.1002/adma.200401848.
@misc{etde_20623045,
title = {CdSe-sensitized p-CuSCN/nanowire n-ZnO heterojunctions}
author = {Levy-Clement, C, Katty, A, Tena-Zaera, R, University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot (Spain)], Ryan, M A, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States)], Hodes, G, and Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot (Israel)]}
abstractNote = {A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core-shell nanowire array. Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency. (Abstract Copyright [2005], Wiley Periodicals, Inc.)}
doi = {10.1002/adma.200401848}
journal = []
issue = {12}
volume = {17}
journal type = {AC}
place = {Germany}
year = {2005}
month = {Jun}
}
title = {CdSe-sensitized p-CuSCN/nanowire n-ZnO heterojunctions}
author = {Levy-Clement, C, Katty, A, Tena-Zaera, R, University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot (Spain)], Ryan, M A, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States)], Hodes, G, and Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot (Israel)]}
abstractNote = {A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core-shell nanowire array. Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency. (Abstract Copyright [2005], Wiley Periodicals, Inc.)}
doi = {10.1002/adma.200401848}
journal = []
issue = {12}
volume = {17}
journal type = {AC}
place = {Germany}
year = {2005}
month = {Jun}
}