CdSe-sensitized p-CuSCN/nanowire n-ZnO heterojunctions Levy-Clement, C; Katty, A [LCMTR, CNRS, 2/8 rue Henri Dunant, 94320 Thiais (France)]; Tena-Zaera, R [LCMTR, CNRS, 2/8 rue Henri Dunant, 94320 Thiais (France)]; University of Valencia, C/Dr. Moliner 50, E-46100 Burjassot (Spain)]; Ryan, M A [LCMTR, CNRS, 2/8 rue Henri Dunant, 94320 Thiais (France)]; Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States)]; Hodes, G [LCMTR, CNRS, 2/8 rue Henri Dunant, 94320 Thiais (France)]; Department of Materials and Interfaces, Weizmann Institute, 76100 Rehovot (Israel)] 14 SOLAR ENERGY; HETEROJUNCTIONS; ZINC OXIDES; CADMIUM SELENIDES; COPPER COMPOUNDS; WIRES; SEMICONDUCTOR MATERIALS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; ENERGY EFFICIENCY A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core-shell nanowire array. Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency. (Abstract Copyright [2005], Wiley Periodicals, Inc.) Available from: http://dx.doi.org/10.1002/adma.200401848 Germany 2005-06-17 English Journal Article Journal Name: Advanced Materials (Weinheim); Journal Volume: 17; Journal Issue: 12; Other Information: With 4 figs., 0 tabs., 30 refs.. SICI: 0935-9648(20050617)17:12<1512::AID-ADMA200401848>3.0.TX;2-J; PBD: 17 Jun 2005 Medium: X; Size: page(s) 1512-1515 https://doi.org/10.1002/adma.200401848 [] 12 17 Journal ID: ISSN 0935-9648; ADVMEW; TRN: DE05GA003 DE 2010-12-31 20623045