Abstract
We have grown epitaxial of nitrogen doped ZnSe films on GaAs(100) substrates by pulsed laser deposition (PLAD) assisted by an nitrogen beam produced by a supersonic nozzle beam source. Atomic force microscopy (AFM) shows that the surface of an ZnSe epilayer grown on Ga As(100) at 10{sup -3} torr is flat and dense and its roughness is about 1.6 nm, less than that of some good quality MOVPE-grown samples. X-ray diffraction (XRD) results show that this ZnSe epilayer is of a fine characteristics of single crystallinity. X-ray photoelectron spectroscopy (XPS) indicates that the epilayer are composed of 84 percent Zn and Se, 10 percent N, and 6 percent O, and other kinds of impurities are scarcely in existence. XPS spectra involving Zn(2p{sub 3/2}) and N(1s) core level indicate that doped nitrogen atoms with an estimated concentration of over 10{sup 21} cm{sup 3} exist in the as-grown epilayer. (author)
Citation Formats
Boo, Bong Hyun, and Lee, Jae Kwang.
Pulsed laser deposition of ZnSe:N epilayers.
Korea, Republic of: N. p.,
1999.
Web.
Boo, Bong Hyun, & Lee, Jae Kwang.
Pulsed laser deposition of ZnSe:N epilayers.
Korea, Republic of.
Boo, Bong Hyun, and Lee, Jae Kwang.
1999.
"Pulsed laser deposition of ZnSe:N epilayers."
Korea, Republic of.
@misc{etde_20198588,
title = {Pulsed laser deposition of ZnSe:N epilayers}
author = {Boo, Bong Hyun, and Lee, Jae Kwang}
abstractNote = {We have grown epitaxial of nitrogen doped ZnSe films on GaAs(100) substrates by pulsed laser deposition (PLAD) assisted by an nitrogen beam produced by a supersonic nozzle beam source. Atomic force microscopy (AFM) shows that the surface of an ZnSe epilayer grown on Ga As(100) at 10{sup -3} torr is flat and dense and its roughness is about 1.6 nm, less than that of some good quality MOVPE-grown samples. X-ray diffraction (XRD) results show that this ZnSe epilayer is of a fine characteristics of single crystallinity. X-ray photoelectron spectroscopy (XPS) indicates that the epilayer are composed of 84 percent Zn and Se, 10 percent N, and 6 percent O, and other kinds of impurities are scarcely in existence. XPS spectra involving Zn(2p{sub 3/2}) and N(1s) core level indicate that doped nitrogen atoms with an estimated concentration of over 10{sup 21} cm{sup 3} exist in the as-grown epilayer. (author)}
place = {Korea, Republic of}
year = {1999}
month = {Jul}
}
title = {Pulsed laser deposition of ZnSe:N epilayers}
author = {Boo, Bong Hyun, and Lee, Jae Kwang}
abstractNote = {We have grown epitaxial of nitrogen doped ZnSe films on GaAs(100) substrates by pulsed laser deposition (PLAD) assisted by an nitrogen beam produced by a supersonic nozzle beam source. Atomic force microscopy (AFM) shows that the surface of an ZnSe epilayer grown on Ga As(100) at 10{sup -3} torr is flat and dense and its roughness is about 1.6 nm, less than that of some good quality MOVPE-grown samples. X-ray diffraction (XRD) results show that this ZnSe epilayer is of a fine characteristics of single crystallinity. X-ray photoelectron spectroscopy (XPS) indicates that the epilayer are composed of 84 percent Zn and Se, 10 percent N, and 6 percent O, and other kinds of impurities are scarcely in existence. XPS spectra involving Zn(2p{sub 3/2}) and N(1s) core level indicate that doped nitrogen atoms with an estimated concentration of over 10{sup 21} cm{sup 3} exist in the as-grown epilayer. (author)}
place = {Korea, Republic of}
year = {1999}
month = {Jul}
}