Pulsed laser deposition of ZnSe:N epilayers Boo, Bong Hyun; Lee, Jae Kwang [Chungnam National University, Taejon (Korea, Republic of)] 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ENERGY BEAM DEPOSITION; LASER BEAM MACHINING; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY; ZINC SELENIDES We have grown epitaxial of nitrogen doped ZnSe films on GaAs(100) substrates by pulsed laser deposition (PLAD) assisted by an nitrogen beam produced by a supersonic nozzle beam source. Atomic force microscopy (AFM) shows that the surface of an ZnSe epilayer grown on Ga As(100) at 10{sup -3} torr is flat and dense and its roughness is about 1.6 nm, less than that of some good quality MOVPE-grown samples. X-ray diffraction (XRD) results show that this ZnSe epilayer is of a fine characteristics of single crystallinity. X-ray photoelectron spectroscopy (XPS) indicates that the epilayer are composed of 84 percent Zn and Se, 10 percent N, and 6 percent O, and other kinds of impurities are scarcely in existence. XPS spectra involving Zn(2p{sub 3/2}) and N(1s) core level indicate that doped nitrogen atoms with an estimated concentration of over 10{sup 21} cm{sup 3} exist in the as-grown epilayer. (author) KAERI, Taejon (Korea, Republic of) KAERI, Taejon (Korea, Republic of) Available from KAERI, Taejon (KR) Korea, Republic of 1999-07-01 English Conference Conference: The seventh symposium on laser spectroscopy, Taejon (Korea, Republic of), 5-6 Nov 1999; Other Information: 17 refs., 3 figs; PBD: 1999; Related Information: In: Proceedings of the seventh symposium on laser spectroscopy, 417 pages. Medium: X; Size: page(s) 248-258 https://doi.org/ [] TRN: KR0100729048427 KRN; EDB-01:092850 2008-02-08 20198588