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Title: Broad spectrum solar cell

Abstract

An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Inventors:
 [1];  [2];  [3];  [4]
  1. Kensington, CA
  2. Lafayette, CA
  3. Richmond, CA
  4. Ithaca, NY
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
909398
Patent Number(s):
7217882
Application Number:
10/445,711
Assignee:
Cornell Research Foundation, Inc. (Ithaca, NY); The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Walukiewicz, Wladyslaw, Yu, Kin Man, Wu, Junqiao, and Schaff, William J. Broad spectrum solar cell. United States: N. p., 2007. Web.
Walukiewicz, Wladyslaw, Yu, Kin Man, Wu, Junqiao, & Schaff, William J. Broad spectrum solar cell. United States.
Walukiewicz, Wladyslaw, Yu, Kin Man, Wu, Junqiao, and Schaff, William J. Tue . "Broad spectrum solar cell". United States. https://www.osti.gov/servlets/purl/909398.
@article{osti_909398,
title = {Broad spectrum solar cell},
author = {Walukiewicz, Wladyslaw and Yu, Kin Man and Wu, Junqiao and Schaff, William J},
abstractNote = {An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In.sub.1-xGa.sub.xN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {5}
}

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Works referenced in this record:

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
journal, September 2001


InGaN-based blue light-emitting diodes and laser diodes
journal, May 1999


Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
journal, April 2001


Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure
journal, June 1999


Electronic Structures of Semiconductor Alloys
journal, April 1970


Growth of Al x Ga 1− x N:Ge on sapphire and silicon substrates
journal, September 1995


Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
journal, January 2001


Unusual properties of the fundamental band gap of InN
journal, May 2002


Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
journal, August 1997


Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
journal, April 1996


Small band gap bowing in In1−xGaxN alloys
journal, June 2002


GaN, AlN, and InN: A review
journal, July 1992