High Temperature Superconducting Thick Films

Arendt, Paul N; Foltyn, Stephen R; Groves, James R; Holesinger, Terry G; Jia, Quanxi

Title: High Temperature Superconducting Thick Films

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Abstract

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Inventors:

Arendt, Paul N ^[1]; Foltyn, Stephen R ^[1]; Groves, James R ^[1]; Holesinger, Terry G ^[1]; Jia, Quanxi ^[1]

Los Alamos, NM

Issue Date:: 2005-08-23

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

OSTI Identifier:: 879969

Patent Number(s):: 6933065

Application Number:: 10/387952

Assignee:: The Regents of the University of California (Los Alamos, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L39/2461 - {Intermediate layers, e.g. for growth control}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/22 - Complex oxides

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/265 - 1 mil or less

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/02 - Epitaxial-layer growth

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C14/081 - {of aluminium, magnesium or beryllium}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/225 - {based on rare earth copper oxides, e.g. high T-superconductors}

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DOE Contract Number:: W-7405-ENG-36

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Arendt, Paul N, Foltyn, Stephen R, Groves, James R, Holesinger, Terry G, and Jia, Quanxi. High Temperature Superconducting Thick Films.  United States: N. p., 2005. 
        Web.

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                    Arendt, Paul N, Foltyn, Stephen R, Groves, James R, Holesinger, Terry G, & Jia, Quanxi. High Temperature Superconducting Thick Films.  United States.

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                    Arendt, Paul N, Foltyn, Stephen R, Groves, James R, Holesinger, Terry G, and Jia, Quanxi. Tue .  
        "High Temperature Superconducting Thick Films".  United States.  https://www.osti.gov/servlets/purl/879969.

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@article{osti_879969,

  title        = {High Temperature Superconducting Thick Films},

  author       = {Arendt, Paul N and Foltyn, Stephen R and Groves, James R and Holesinger, Terry G and Jia, Quanxi},

  abstractNote = {An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2005},

  month        = {8}

}

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