High voltage design structure for high temperature superconducting device
Abstract
In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.
- Inventors:
-
- Rexford, NY
- Issue Date:
- Research Org.:
- SuperPower, Inc.
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 984337
- Patent Number(s):
- 7375933
- Application Number:
- 11/443,735
- Assignee:
- SuperPower, Inc.
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01F - MAGNETS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- FC36-03GO13033
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Tekletsadik, Kasegn D. High voltage design structure for high temperature superconducting device. United States: N. p., 2008.
Web.
Tekletsadik, Kasegn D. High voltage design structure for high temperature superconducting device. United States.
Tekletsadik, Kasegn D. Tue .
"High voltage design structure for high temperature superconducting device". United States. https://www.osti.gov/servlets/purl/984337.
@article{osti_984337,
title = {High voltage design structure for high temperature superconducting device},
author = {Tekletsadik, Kasegn D},
abstractNote = {In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 20 00:00:00 EDT 2008},
month = {Tue May 20 00:00:00 EDT 2008}
}
Works referenced in this record:
Prebreakdown phenomena at high voltage in liquid nitrogen and comparison with mineral oil
journal, December 2002
- Frayssines, P. E.; Lesaint, O.; Bonifaci, N.
- IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 9, Issue 6
Prebreakdown and breakdown phenomena under uniform field in liquid nitrogen and comparison with mineral oil
journal, December 2003
- Frayssines, P. E.; Lesaint, O.; Bonifaci, N.
- IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 10, Issue 6