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Title: Wafer chamber having a gas curtain for extreme-UV lithography

Abstract

An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.

Inventors:
 [1];  [1]
  1. Livermore, CA
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
873594
Patent Number(s):
6198792
Assignee:
EUV LLC (Santa Clara, CA)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
wafer; chamber; gas; curtain; extreme-uv; lithography; euvl; device; separated; upstream; optics; barrier; aperture; permeable; inert; maintaining; proximity; positioned; extreme; ultraviolet; effectively; prevent; contaminants; reaching; photolithography; solid; window; filters; employed; source; reflected; radiation; camera; removes; entrainment; reflected radiation; extreme-uv lithography; ultraviolet lithography; inert gas; extreme ultraviolet; wafer positioned; wafer chamber; gas curtain; /378/250/

Citation Formats

Kanouff, Michael P, and Ray-Chaudhuri, Avijit K. Wafer chamber having a gas curtain for extreme-UV lithography. United States: N. p., 2001. Web.
Kanouff, Michael P, & Ray-Chaudhuri, Avijit K. Wafer chamber having a gas curtain for extreme-UV lithography. United States.
Kanouff, Michael P, and Ray-Chaudhuri, Avijit K. Mon . "Wafer chamber having a gas curtain for extreme-UV lithography". United States. https://www.osti.gov/servlets/purl/873594.
@article{osti_873594,
title = {Wafer chamber having a gas curtain for extreme-UV lithography},
author = {Kanouff, Michael P and Ray-Chaudhuri, Avijit K},
abstractNote = {An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}