Method of forming buried oxide layers in silicon
Abstract
A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.
- Inventors:
-
- Pleasantville, NY
- Lenoir City, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 873103
- Patent Number(s):
- 6090689
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; forming; buried; oxide; layers; silicon; process; silicon-on-insulator; described; incorporating; steps; implantation; oxygen; substrate; elevated; temperature; implanting; below; 200; degree; dose; form; amorphous; layer; annealing; mixture; defective; single; crystal; polycrystalline; continuous; surface; provide; isolated; superficial; overcomes; islands; discontinuous; buried oxide; oxide layers; silicon layer; temperature below; amorphous silicon; elevated temperature; silicon substrate; single crystal; oxide layer; polycrystalline silicon; silicon oxide; crystalline silicon; annealing steps; annealing step; crystal silicon; superficial layer; layer below; forming silicon-on-insulator; forming silicon; implanting oxygen; oxide form; defective single; described incorporating; /438/117/
Citation Formats
Sadana, Devendra Kumar, and Holland, Orin Wayne. Method of forming buried oxide layers in silicon. United States: N. p., 2000.
Web.
Sadana, Devendra Kumar, & Holland, Orin Wayne. Method of forming buried oxide layers in silicon. United States.
Sadana, Devendra Kumar, and Holland, Orin Wayne. Sat .
"Method of forming buried oxide layers in silicon". United States. https://www.osti.gov/servlets/purl/873103.
@article{osti_873103,
title = {Method of forming buried oxide layers in silicon},
author = {Sadana, Devendra Kumar and Holland, Orin Wayne},
abstractNote = {A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}
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Works referenced in this record:
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