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Title: Method of making compound semiconductor films and making related electronic devices

Abstract

A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant. Compound films including a Group IIB-IVA-VA compound or a Group IB-VA-VIA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cellsmore » and other electronic devices.« less

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. (Manhattan Beach, CA)
  2. (Tarzana, CA)
  3. (Northridge, CA)
  4. (Woodland Hills, CA)
  5. (Glendale, CA)
Issue Date:
Research Org.:
International Solar Electric Technology, Inc. (Inglewood, CA)
OSTI Identifier:
872671
Patent Number(s):
5985691
Assignee:
International Solar Electric Technology, Inc. (Inglewood, CA) OAK
DOE Contract Number:  
FG03-96ER82191
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; compound; semiconductor; films; related; electronic; devices; forming; film; steps; preparing; source; material; depositing; base; form; precursor; heating; suitable; atmosphere; ib-iiia; alloy-containing; particles; alloy; phase; alloys; constituting; 50; molar; percent; elements; iiia; ib-iiia-via; ratio; 80; substantially; reduced; prepared; powder; dopant; including; iib-iva-va; ib-va-via; substituted; appropriate; substitutions; applicable; fabrication; solar; cells; semiconductor film; precursor film; alloy phase; molar ratio; source material; solar cell; solar cells; compound semiconductor; electronic devices; compound film; powder form; molar percent; semiconductor films; containing particles; electronic device; related electronic; /438/

Citation Formats

Basol, Bulent M., Kapur, Vijay K., Halani, Arvind T., Leidholm, Craig R., and Roe, Robert A. Method of making compound semiconductor films and making related electronic devices. United States: N. p., 1999. Web.
Basol, Bulent M., Kapur, Vijay K., Halani, Arvind T., Leidholm, Craig R., & Roe, Robert A. Method of making compound semiconductor films and making related electronic devices. United States.
Basol, Bulent M., Kapur, Vijay K., Halani, Arvind T., Leidholm, Craig R., and Roe, Robert A. Fri . "Method of making compound semiconductor films and making related electronic devices". United States. https://www.osti.gov/servlets/purl/872671.
@article{osti_872671,
title = {Method of making compound semiconductor films and making related electronic devices},
author = {Basol, Bulent M. and Kapur, Vijay K. and Halani, Arvind T. and Leidholm, Craig R. and Roe, Robert A.},
abstractNote = {A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant. Compound films including a Group IIB-IVA-VA compound or a Group IB-VA-VIA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}

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