DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultrafast optical technique for the characterization of altered materials

Abstract

Disclosed herein is a method and a system for non-destructively examining a semiconductor sample (30) having at least one localized region underlying a surface (30a) through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in amore » polarization state of the reflected and/or transmitted light; (d) a change in the optical phase of the reflected and/or transmitted light; (e) a change in direction of the reflected and/or transmitted light; and (f) a change in optical path length between the sample's surface and a detector.

Inventors:
 [1]
  1. Barrington, RI
Issue Date:
Research Org.:
Brown Univ., Providence, RI (United States)
OSTI Identifier:
871314
Patent Number(s):
5706094
Assignee:
Brown University Research Foundation (Providence, RI)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
DOE Contract Number:  
FG02-86ER45267
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
ultrafast; optical; technique; characterization; altered; materials; disclosed; method; non-destructively; examining; semiconductor; sample; 30; localized; region; underlying; surface; 30a; selected; chemical; species; implanted; diffused; step; induces; transient; time-varying; change; constants; location; near; measures; response; probe; beam; pulsed; continuous; wave; time; varying; third; associates; measured; concentration; type; implant; energy; presence; absence; introduced; implant-related; damage; apparatus; accordance; employed; conjunction; measurement; following; effects; arising; time-dependent; due; application; pump; pulse; reflected; intensity; transmitted; polarization; light; phase; direction; path; length; detector; optical constants; transmitted light; third step; optical phase; continuous wave; probe beam; pump pulse; path length; optical path; chemical species; optical probe; transmitted intensity; chemical specie; localized region; selected chemical; semiconductor sample; optical technique; measured response; /356/

Citation Formats

Maris, Humphrey J. Ultrafast optical technique for the characterization of altered materials. United States: N. p., 1998. Web.
Maris, Humphrey J. Ultrafast optical technique for the characterization of altered materials. United States.
Maris, Humphrey J. Tue . "Ultrafast optical technique for the characterization of altered materials". United States. https://www.osti.gov/servlets/purl/871314.
@article{osti_871314,
title = {Ultrafast optical technique for the characterization of altered materials},
author = {Maris, Humphrey J},
abstractNote = {Disclosed herein is a method and a system for non-destructively examining a semiconductor sample (30) having at least one localized region underlying a surface (30a) through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in a polarization state of the reflected and/or transmitted light; (d) a change in the optical phase of the reflected and/or transmitted light; (e) a change in direction of the reflected and/or transmitted light; and (f) a change in optical path length between the sample's surface and a detector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 06 00:00:00 EST 1998},
month = {Tue Jan 06 00:00:00 EST 1998}
}

Works referenced in this record:

Nondestructive detection of titanium disilicide phase transformation by picosecond ultrasonics
journal, November 1992


Study of vibrational modes of gold nanostructures by picosecond ultrasonics
journal, January 1993


Ion implant monitoring with thermal wave technology
journal, September 1985


Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium
journal, May 1974


Picosecond acoustics as a non-destructive tool for the characterization of very thin films
journal, November 1987


Sound velocity and index of refraction of AlAs measured by picosecond ultrasonics
journal, November 1988


Carrier lifetime versus ion‐implantation dose in silicon on sapphire
journal, February 1987


Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements
journal, November 1994


Measurements of the Kapitza conductance between diamond and several metals
journal, March 1992


Time-resolved study of vibrations of a -Ge:H/ a -Si:H multilayers
journal, September 1988


Detection of Thin Interfacial Layers by Picosecond Ultrasonics
journal, January 1992


Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K
journal, December 1993


Ultrasonic experiments at ultra-high frequency with picosecond time-resolution
conference, January 1990


Nondestructive testing of microstructures by picosecond ultrasonics
journal, December 1990


Physics of ultrafast phenomena in solid state plasmas
journal, January 1978


Detection of thermal waves through optical reflectance
journal, June 1985


Surface generation and detection of phonons by picosecond light pulses
journal, September 1986


Thermal and plasma wave depth profiling in silicon
journal, September 1985


Phonon attenuation and velocity measurements in transparent materials by picosecond acoustic interferometry
journal, April 1991


Attenuation of longitudinal-acoustic phonons in amorphous SiO 2 at frequencies up to 440 GHz
journal, September 1991


Thin‐film thickness measurements with thermal waves
journal, July 1983


Detection of Titanium Silicide Formation and Phase Transformation by Picosecond Ultrasonics
journal, January 1992


Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CF x at the Al/Si interface
journal, October 1992


Picosecond ultrasonics
journal, January 1989


Picosecond optical studies of amorphous diamond and diamondlike carbon: Thermal conductivity and longitudinal sound velocity
journal, September 1994


Picosecond spectroscopy of semiconductors
journal, January 1978


Picosecond photoinduced electronic and acoustic effects in a-Si:H based multilayer structures
journal, December 1987


Elastic properties of silicon oxynitride films determined by picosecond acoustics
journal, December 1988


A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
journal, November 1992


Studies of High-Frequency Acoustic Phonons Using Picosecond Optical Techniques
book, January 1986