Ultrafast optical technique for the characterization of altered materials
Abstract
Disclosed herein is a method and a system for non-destructively examining a semiconductor sample (30) having at least one localized region underlying a surface (30a) through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in amore »
- Inventors:
-
- Barrington, RI
- Issue Date:
- Research Org.:
- Brown Univ., Providence, RI (United States)
- OSTI Identifier:
- 871314
- Patent Number(s):
- 5706094
- Assignee:
- Brown University Research Foundation (Providence, RI)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- FG02-86ER45267
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- ultrafast; optical; technique; characterization; altered; materials; disclosed; method; non-destructively; examining; semiconductor; sample; 30; localized; region; underlying; surface; 30a; selected; chemical; species; implanted; diffused; step; induces; transient; time-varying; change; constants; location; near; measures; response; probe; beam; pulsed; continuous; wave; time; varying; third; associates; measured; concentration; type; implant; energy; presence; absence; introduced; implant-related; damage; apparatus; accordance; employed; conjunction; measurement; following; effects; arising; time-dependent; due; application; pump; pulse; reflected; intensity; transmitted; polarization; light; phase; direction; path; length; detector; optical constants; transmitted light; third step; optical phase; continuous wave; probe beam; pump pulse; path length; optical path; chemical species; optical probe; transmitted intensity; chemical specie; localized region; selected chemical; semiconductor sample; optical technique; measured response; /356/
Citation Formats
Maris, Humphrey J. Ultrafast optical technique for the characterization of altered materials. United States: N. p., 1998.
Web.
Maris, Humphrey J. Ultrafast optical technique for the characterization of altered materials. United States.
Maris, Humphrey J. Tue .
"Ultrafast optical technique for the characterization of altered materials". United States. https://www.osti.gov/servlets/purl/871314.
@article{osti_871314,
title = {Ultrafast optical technique for the characterization of altered materials},
author = {Maris, Humphrey J},
abstractNote = {Disclosed herein is a method and a system for non-destructively examining a semiconductor sample (30) having at least one localized region underlying a surface (30a) through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in a polarization state of the reflected and/or transmitted light; (d) a change in the optical phase of the reflected and/or transmitted light; (e) a change in direction of the reflected and/or transmitted light; and (f) a change in optical path length between the sample's surface and a detector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 06 00:00:00 EST 1998},
month = {Tue Jan 06 00:00:00 EST 1998}
}
Works referenced in this record:
Nondestructive detection of titanium disilicide phase transformation by picosecond ultrasonics
journal, November 1992
- Lin, H. ‐N.; Stoner, R. J.; Maris, H. J.
- Applied Physics Letters, Vol. 61, Issue 22
Study of vibrational modes of gold nanostructures by picosecond ultrasonics
journal, January 1993
- Lin, H. ‐N.; Maris, H. J.; Freund, L. B.
- Journal of Applied Physics, Vol. 73, Issue 1
Ion implant monitoring with thermal wave technology
journal, September 1985
- Smith, W. Lee; Rosencwaig, Allan; Willenborg, David L.
- Applied Physics Letters, Vol. 47, Issue 6
Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium
journal, May 1974
- Auston, D. H.; Shank, C. V.
- Physical Review Letters, Vol. 32, Issue 20
Picosecond acoustics as a non-destructive tool for the characterization of very thin films
journal, November 1987
- Thomsen, C.; Maris, H. J.; Tauc, J.
- Thin Solid Films, Vol. 154, Issue 1-2
Sound velocity and index of refraction of AlAs measured by picosecond ultrasonics
journal, November 1988
- Grahn, H. T.; Young, D. A.; Maris, H. J.
- Applied Physics Letters, Vol. 53, Issue 21
Carrier lifetime versus ion‐implantation dose in silicon on sapphire
journal, February 1987
- Doany, F. E.; Grischkowsky, D.; Chi, C. ‐C.
- Applied Physics Letters, Vol. 50, Issue 8
Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements
journal, November 1994
- Sumie, Shingo; Takamatsu, Hiroyuki; Morimoto, Tsutomu
- Journal of Applied Physics, Vol. 76, Issue 10
Measurements of the Kapitza conductance between diamond and several metals
journal, March 1992
- Stoner, R. J.; Maris, H. J.; Anthony, T. R.
- Physical Review Letters, Vol. 68, Issue 10
Time-resolved study of vibrations of a -Ge:H/ a -Si:H multilayers
journal, September 1988
- Grahn, H. T.; Maris, H. J.; Tauc, J.
- Physical Review B, Vol. 38, Issue 9
Detection of Thin Interfacial Layers by Picosecond Ultrasonics
journal, January 1992
- Tas, G.; Stoner, R. J.; Maris, H. J.
- MRS Proceedings, Vol. 259
Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K
journal, December 1993
- Stoner, R. J.; Maris, H. J.
- Physical Review B, Vol. 48, Issue 22
Ultrasonic experiments at ultra-high frequency with picosecond time-resolution
conference, January 1990
- Lin, H. -N.; Stoner, R. J.; Maris, H. J.
- IEEE Symposium on Ultrasonics
Nondestructive testing of microstructures by picosecond ultrasonics
journal, December 1990
- Lin, H. -N.; Stoner, R. J.; Maris, H. J.
- Journal of Nondestructive Evaluation, Vol. 9, Issue 4
Physics of ultrafast phenomena in solid state plasmas
journal, January 1978
- Elci, Ahmet; Smirl, Arthur L.; Leung, C. Y.
- Solid-State Electronics, Vol. 21, Issue 1
Detection of thermal waves through optical reflectance
journal, June 1985
- Rosencwaig, Allan; Opsal, Jon; Smith, W. L.
- Applied Physics Letters, Vol. 46, Issue 11
Surface generation and detection of phonons by picosecond light pulses
journal, September 1986
- Thomsen, C.; Grahn, H. T.; Maris, H. J.
- Physical Review B, Vol. 34, Issue 6
Thermal and plasma wave depth profiling in silicon
journal, September 1985
- Opsal, Jon; Rosencwaig, Allan
- Applied Physics Letters, Vol. 47, Issue 5
Phonon attenuation and velocity measurements in transparent materials by picosecond acoustic interferometry
journal, April 1991
- Lin, H. ‐N.; Stoner, R. J.; Maris, H. J.
- Journal of Applied Physics, Vol. 69, Issue 7
Attenuation of longitudinal-acoustic phonons in amorphous at frequencies up to 440 GHz
journal, September 1991
- Zhu, T. C.; Maris, H. J.; Tauc, J.
- Physical Review B, Vol. 44, Issue 9
Thin‐film thickness measurements with thermal waves
journal, July 1983
- Rosencwaig, Allan; Opsal, Jon; Willenborg, David L.
- Applied Physics Letters, Vol. 43, Issue 2
Detection of Titanium Silicide Formation and Phase Transformation by Picosecond Ultrasonics
journal, January 1992
- Lin, H. -N.; Stoner, R. J.; Maris, H. J.
- MRS Proceedings, Vol. 260
Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CF x at the Al/Si interface
journal, October 1992
- Tas, G.; Stoner, R. J.; Maris, H. J.
- Applied Physics Letters, Vol. 61, Issue 15
Picosecond ultrasonics
journal, January 1989
- Grahn, H. T.; Maris, H. J.; Tauc, J.
- IEEE Journal of Quantum Electronics, Vol. 25, Issue 12
Picosecond optical studies of amorphous diamond and diamondlike carbon: Thermal conductivity and longitudinal sound velocity
journal, September 1994
- Morath, Christopher J.; Maris, Humphrey J.; Cuomo, Jerome J.
- Journal of Applied Physics, Vol. 76, Issue 5
Picosecond spectroscopy of semiconductors
journal, January 1978
- Auston, D. H.; McAfee, S.; Shank, C. V.
- Solid-State Electronics, Vol. 21, Issue 1
Picosecond photoinduced electronic and acoustic effects in a-Si:H based multilayer structures
journal, December 1987
- Grahn, H. T.; Vardeny, Z.; Maris, H. J.
- Journal of Non-Crystalline Solids, Vol. 97-98
Elastic properties of silicon oxynitride films determined by picosecond acoustics
journal, December 1988
- Grahn, H. T.; Maris, H. J.; Tauc, J.
- Applied Physics Letters, Vol. 53, Issue 23
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
journal, November 1992
- Sumie, Shingo; Takamatsu, Hiroyuki; Nishimoto, Yoshiro
- Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 11
Studies of High-Frequency Acoustic Phonons Using Picosecond Optical Techniques
book, January 1986
- Maris, H. J.; Thomsen, C.; Tauc, J.
- Phonon Scattering in Condensed Matter V, p. 374-380