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Title: Ultrafast optical technique for the characterization of altered materials

Abstract

Disclosed herein is a method and a system for non-destructively examining a semiconductor sample having at least one localized region underlying a surface through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in a polarization statemore » of the reflected and/or transmitted light; (d) a change in the optical phase of the reflected and/or transmitted light; (e) a change in direction of the reflected and/or transmitted light; and (f) a change in optical path length between the sample`s surface and a detector. 22 figs.« less

Inventors:
Issue Date:
Research Org.:
Brown Univ., Providence, RI (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
563691
Patent Number(s):
5706094
Application Number:
PAN: 8-519,666
Assignee:
Brown Univ. Research Foundation, Providence, RI (United States)
DOE Contract Number:  
FG02-86ER45267
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 6 Jan 1998
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; NONDESTRUCTIVE TESTING; SEMICONDUCTOR MATERIALS; VISIBLE RADIATION; TIME DEPENDENCE; OPTICAL PROPERTIES; DOPED MATERIALS

Citation Formats

Maris, H J. Ultrafast optical technique for the characterization of altered materials. United States: N. p., 1998. Web.
Maris, H J. Ultrafast optical technique for the characterization of altered materials. United States.
Maris, H J. Tue . "Ultrafast optical technique for the characterization of altered materials". United States.
@article{osti_563691,
title = {Ultrafast optical technique for the characterization of altered materials},
author = {Maris, H J},
abstractNote = {Disclosed herein is a method and a system for non-destructively examining a semiconductor sample having at least one localized region underlying a surface through into which a selected chemical species has been implanted or diffused. A first step induces at least one transient time-varying change in optical constants of the sample at a location at or near to a surface of the sample. A second step measures a response of the sample to an optical probe beam, either pulsed or continuous wave, at least during a time that the optical constants are varying. A third step associates the measured response with at least one of chemical species concentration, chemical species type, implant energy, a presence or absence of an introduced chemical species region at the location, and a presence or absence of implant-related damage. The method and apparatus in accordance with this invention can be employed in conjunction with a measurement of one or more of the following effects arising from a time-dependent change in the optical constants of the sample due to the application of at least one pump pulse: (a) a change in reflected intensity; (b) a change in transmitted intensity; (c) a change in a polarization state of the reflected and/or transmitted light; (d) a change in the optical phase of the reflected and/or transmitted light; (e) a change in direction of the reflected and/or transmitted light; and (f) a change in optical path length between the sample`s surface and a detector. 22 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}