Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination
Abstract
Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.
- Inventors:
-
- Denver, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 868831
- Patent Number(s):
- 5223453
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- controlled; metal-semiconductor; sintering; alloying; one-directional; reverse; illumination; metal; strips; deposited; top; surface; semiconductor; substrate; sintered; temperature; simultaneously; layer; bottom; simultaneous; opposite; surfaces; temperatures; accomplished; directing; infrared; radiation; interface; absorbed; create; primary; hot; zone; melt; alloy; secondary; heat; effects; including; conducted; created; reflected; absorption; combine; zones; interfaces; sinter; opposite surfaces; hot zone; top surface; semiconductor substrate; metal layer; infrared radiation; bottom surface; opposite surface; metal strips; metal strip; radiation reflected; temperature simultaneously; hot zones; including heat; site surface; /438/
Citation Formats
Sopori, Bhushan L. Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination. United States: N. p., 1993.
Web.
Sopori, Bhushan L. Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination. United States.
Sopori, Bhushan L. Fri .
"Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination". United States. https://www.osti.gov/servlets/purl/868831.
@article{osti_868831,
title = {Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination},
author = {Sopori, Bhushan L},
abstractNote = {Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1993},
month = {Fri Jan 01 00:00:00 EST 1993}
}
Works referenced in this record:
Fabrication of diode arrays for photovoltaic characterization of silicon substrates
journal, May 1988
- Sopori, B. L.
- Applied Physics Letters, Vol. 52, Issue 20