Title: Direct growth of metal nanoplates on semiconductor substrates

Abstract

Metal nanoplates are grown on n-type and p-type semiconductor wafer substrates through galvanic reactions between substantially pure aqueous metal solutions and the substrates. The morphology of the resulting metal nanoplates that protrude from the substrate can be tuned by controlling the concentration of the metal solution and the reaction time of the solution with the semiconductor wafer. Nanoplate size gradually increases with prolonged growth time and the nanoplate thicknesses increases in a unique stepwise fashion due to polymerization and fusion of adjacent nanoplates. Further, the roughness of the nanoplates can also be controlled. In a particular embodiment, Ag nanoplates are grown on a GaAs substrate through reaction with a solution of AgNO3 with the substrate.

Inventors:

Sun, Yugang

Issue Date:

2012-08-21

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1531757

Patent Number(s):

8247325

Application Number:

12/574,552

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/1642 - {semiconductor
C23C18/1689 - {After-treatment}
C23C18/42 - Coating with noble metals
C23C18/48 - Coating with alloys
C23C18/54 - Contact plating, i.e. electroless electrochemical plating

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/544 - Solar cells from Group III-V materials

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:  

AC02-06CH11357; W-31-109-ENG-38

Resource Type:

Patent

Resource Relation:

Patent File Date: 2009-10-06

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY