Thermophotovoltaic energy conversion device
Abstract
A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.
- Inventors:
- Issue Date:
- Research Org.:
- KAPL Inc
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 645945
- Patent Number(s):
- 5753050
- Application Number:
- PAN: 8-703,156
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 19 May 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 30 DIRECT ENERGY CONVERSION; THERMOPHOTOVOLTAIC CONVERTERS; DESIGN; FABRICATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS
Citation Formats
Charache, G W, Baldasaro, P F, and Egley, J L. Thermophotovoltaic energy conversion device. United States: N. p., 1998.
Web.
Charache, G W, Baldasaro, P F, & Egley, J L. Thermophotovoltaic energy conversion device. United States.
Charache, G W, Baldasaro, P F, and Egley, J L. Tue .
"Thermophotovoltaic energy conversion device". United States.
@article{osti_645945,
title = {Thermophotovoltaic energy conversion device},
author = {Charache, G W and Baldasaro, P F and Egley, J L},
abstractNote = {A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 19 00:00:00 EDT 1998},
month = {Tue May 19 00:00:00 EDT 1998}
}