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Title: Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

Abstract

A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

Inventors:
; ;
Issue Date:
Research Org.:
KAPL Inc
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
672531
Patent Number(s):
5769964
Application Number:
PAN: 8-704,974
Assignee:
Dept. of Energy, Washington, DC (United States)
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 23 Jun 1998
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; THERMOPHOTOVOLTAIC CONVERTERS; DESIGN; FABRICATION; ENERGY GAP; SUBSTRATES; SEMICONDUCTOR MATERIALS

Citation Formats

Charache, G W, Baldasaro, P F, and Nichols, G J. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system. United States: N. p., 1998. Web.
Charache, G W, Baldasaro, P F, & Nichols, G J. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system. United States.
Charache, G W, Baldasaro, P F, and Nichols, G J. Tue . "Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system". United States.
@article{osti_672531,
title = {Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system},
author = {Charache, G W and Baldasaro, P F and Nichols, G J},
abstractNote = {A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {6}
}