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Title: Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes

Abstract

A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.

Inventors:
;
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1998510
Patent Number(s):
11681059
Application Number:
17/489,645
Assignee:
Triad National Security, LLC (Los Alamos, NM)
DOE Contract Number:  
89233218CNA000001
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/29/2021
Country of Publication:
United States
Language:
English

Citation Formats

Tsai, Hsinhan, and Nie, Wanyi. Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes. United States: N. p., 2023. Web.
Tsai, Hsinhan, & Nie, Wanyi. Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes. United States.
Tsai, Hsinhan, and Nie, Wanyi. Tue . "Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes". United States. https://www.osti.gov/servlets/purl/1998510.
@article{osti_1998510,
title = {Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes},
author = {Tsai, Hsinhan and Nie, Wanyi},
abstractNote = {A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 20 00:00:00 EDT 2023},
month = {Tue Jun 20 00:00:00 EDT 2023}
}

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