Partial discharge suppression in high voltage solid-state devices
Abstract
Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Opcondys, Inc., Manteca, CA (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1987054
- Patent Number(s):
- 11557646
- Application Number:
- 17/177,884
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA); Opcondys, Inc. (Manteca, CA)
- DOE Contract Number:
- AC52-07NA27344; AR0000907
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 02/17/2021
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Sampayan, Stephen, and Sampayan, Kristin Cortella. Partial discharge suppression in high voltage solid-state devices. United States: N. p., 2023.
Web.
Sampayan, Stephen, & Sampayan, Kristin Cortella. Partial discharge suppression in high voltage solid-state devices. United States.
Sampayan, Stephen, and Sampayan, Kristin Cortella. Tue .
"Partial discharge suppression in high voltage solid-state devices". United States. https://www.osti.gov/servlets/purl/1987054.
@article{osti_1987054,
title = {Partial discharge suppression in high voltage solid-state devices},
author = {Sampayan, Stephen and Sampayan, Kristin Cortella},
abstractNote = {Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 17 00:00:00 EST 2023},
month = {Tue Jan 17 00:00:00 EST 2023}
}
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