High-voltage, high-current, solid-state closing switch

Title: High-voltage, high-current, solid-state closing switch

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

Inventors:: Focia, Ronald Jeffrey

Issue Date:: 2017-08-22

OSTI Identifier:: 1375931

Assignee:: National Technology & Engineering Solutions of Sandia, LLC SNL-A

Patent Number(s):: 9,742,394

Application Number:: 14/305,148

Contract Number:: AC04-94AL85000

Resource Relation:: Patent File Date: 2014 Jun 16

Research Org:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 24 POWER TRANSMISSION AND DISTRIBUTION

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Other works cited in this record:

Pulse Gate
patent, January 1966

Diamant, H. B.
US Patent Document 3,231,758
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F3231758

Breakover-triggered dipole component having a controlled sensitivity
patent, January 1999

Bernier, Eric
US Patent Document 5,861,639
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Low power gate trigger circuit for controlling a silicon-controlled rectifier circuit
patent, March 2004

Deam, David R.
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High holding voltage, mixed-voltage domain electrostatic discharge clamp
patent, May 2015

Van Wijmeersch, Sven; Van Camp, Benjamin; Marichal, Olivier
US Patent Document 9,042,065
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Characteristics of a high-current, high-voltage Shockley diode
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IEEE Transactions on Electron Devices, Vol. 17, Issue 9, p. 694-705
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