Hybrid silicon lasers and amplifiers with 2D phosphorene film
Abstract
Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568685
- Patent Number(s):
- 10374385
- Application Number:
- 15/706,109
- Assignee:
- UChicago Argonne, LLC (Chicago, IL); Northwestern University (Evanston, IL)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 09/15/2017
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Husko, Chad, Guest, Jeff, Hersam, Mark, Kang, Joohoon, Wood, Joshua, and Checoury, Xavier. Hybrid silicon lasers and amplifiers with 2D phosphorene film. United States: N. p., 2019.
Web.
Husko, Chad, Guest, Jeff, Hersam, Mark, Kang, Joohoon, Wood, Joshua, & Checoury, Xavier. Hybrid silicon lasers and amplifiers with 2D phosphorene film. United States.
Husko, Chad, Guest, Jeff, Hersam, Mark, Kang, Joohoon, Wood, Joshua, and Checoury, Xavier. Tue .
"Hybrid silicon lasers and amplifiers with 2D phosphorene film". United States. https://www.osti.gov/servlets/purl/1568685.
@article{osti_1568685,
title = {Hybrid silicon lasers and amplifiers with 2D phosphorene film},
author = {Husko, Chad and Guest, Jeff and Hersam, Mark and Kang, Joohoon and Wood, Joshua and Checoury, Xavier},
abstractNote = {Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 06 00:00:00 EDT 2019},
month = {Tue Aug 06 00:00:00 EDT 2019}
}
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- US Patent Document 7,869,470
Hybrid III-V silicon laser formed by direct bonding
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- Heck, John; Bar, Hanan; Jones, Richard
- US Patent Document 8,620,164
System and Method for a Micro Ring Laser
patent-application, March 2011
- Xu, Qianfan; Fiorentino, Marco; Beausoleil, Raymond G.
- US Patent Application 12/990940; 20110064106