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Title: Hybrid silicon lasers and amplifiers with 2D phosphorene film

Abstract

Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568685
Patent Number(s):
10374385
Application Number:
15/706,109
Assignee:
UChicago Argonne, LLC (Chicago, IL); Northwestern University (Evanston, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 09/15/2017
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Husko, Chad, Guest, Jeff, Hersam, Mark, Kang, Joohoon, Wood, Joshua, and Checoury, Xavier. Hybrid silicon lasers and amplifiers with 2D phosphorene film. United States: N. p., 2019. Web.
Husko, Chad, Guest, Jeff, Hersam, Mark, Kang, Joohoon, Wood, Joshua, & Checoury, Xavier. Hybrid silicon lasers and amplifiers with 2D phosphorene film. United States.
Husko, Chad, Guest, Jeff, Hersam, Mark, Kang, Joohoon, Wood, Joshua, and Checoury, Xavier. Tue . "Hybrid silicon lasers and amplifiers with 2D phosphorene film". United States. https://www.osti.gov/servlets/purl/1568685.
@article{osti_1568685,
title = {Hybrid silicon lasers and amplifiers with 2D phosphorene film},
author = {Husko, Chad and Guest, Jeff and Hersam, Mark and Kang, Joohoon and Wood, Joshua and Checoury, Xavier},
abstractNote = {Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {8}
}

Patent:

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