Title: All 2D, high mobility, flexible, transparent thin film transistor

Abstract

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Inventors:

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

Issue Date:

2017-01-17

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1339546

Patent Number(s):

9548394

Application Number:

14/692,596

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/24 - including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
H01L29/242 - {AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
H01L29/45 - Ohmic electrodes
H01L29/4908 - {for thin film semiconductor, e.g. gate of TFT}
H01L29/66969 - {of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L29/78603 - {characterised by the insulating substrate or support
H01L29/78648 - {arranged on opposing sides of the channel}
H01L29/78681 - {having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te}
H01L29/78684 - {having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
H01L29/78696 - {characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Apr 21

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE