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Title: Energy storage device with large charge separation

Abstract

High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

Inventors:
; ;
Issue Date:
Research Org.:
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1433228
Patent Number(s):
9,935,208
Application Number:
15/060,239
Assignee:
The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA) ARPA-E
DOE Contract Number:  
AR0000069
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Mar 03
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE

Citation Formats

Holme, Timothy P., Prinz, Friedrich B., and Iancu, Andrei T. Energy storage device with large charge separation. United States: N. p., 2018. Web.
Holme, Timothy P., Prinz, Friedrich B., & Iancu, Andrei T. Energy storage device with large charge separation. United States.
Holme, Timothy P., Prinz, Friedrich B., and Iancu, Andrei T. Tue . "Energy storage device with large charge separation". United States. https://www.osti.gov/servlets/purl/1433228.
@article{osti_1433228,
title = {Energy storage device with large charge separation},
author = {Holme, Timothy P. and Prinz, Friedrich B. and Iancu, Andrei T.},
abstractNote = {High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {4}
}

Patent:

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