Energy storage device with large charge separation
Abstract
High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.
- Inventors:
- Issue Date:
- Research Org.:
- Stanford Univ., CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1246835
- Patent Number(s):
- 9312398
- Application Number:
- 13/135,798
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Palo Alto, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AR0000069
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Jul 13
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 25 ENERGY STORAGE; 36 MATERIALS SCIENCE
Citation Formats
Holme, Timothy P., Prinz, Friedrich B., and Iancu, Andrei. Energy storage device with large charge separation. United States: N. p., 2016.
Web.
Holme, Timothy P., Prinz, Friedrich B., & Iancu, Andrei. Energy storage device with large charge separation. United States.
Holme, Timothy P., Prinz, Friedrich B., and Iancu, Andrei. Tue .
"Energy storage device with large charge separation". United States. https://www.osti.gov/servlets/purl/1246835.
@article{osti_1246835,
title = {Energy storage device with large charge separation},
author = {Holme, Timothy P. and Prinz, Friedrich B. and Iancu, Andrei},
abstractNote = {High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {4}
}
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Works referenced in this record:
Quantum dot manipulating method and quantum dot production/manipulation apparatus
patent, February 2010
- Itoh, Tadashi; Ashida, Masaaki; Ishihara, Hajime
- US Patent Document 7,662,731
High energy storage capacitor by embedding tunneling nano-structures
patent-application, June 2012
- Holme, Timothy P.; Prinz, Friedrich B.; Van Stockum, Philip B.
- US Patent Application 12/928346; 20120156545