Sol-gel process for the manufacture of high power switches
Abstract
According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1326800
- Patent Number(s):
- 9455366
- Application Number:
- 13/843,863
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Mar 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Landingham, Richard L., Satcher, Jr, Joe, and Reibold, Robert. Sol-gel process for the manufacture of high power switches. United States: N. p., 2016.
Web.
Landingham, Richard L., Satcher, Jr, Joe, & Reibold, Robert. Sol-gel process for the manufacture of high power switches. United States.
Landingham, Richard L., Satcher, Jr, Joe, and Reibold, Robert. Tue .
"Sol-gel process for the manufacture of high power switches". United States. https://www.osti.gov/servlets/purl/1326800.
@article{osti_1326800,
title = {Sol-gel process for the manufacture of high power switches},
author = {Landingham, Richard L. and Satcher, Jr, Joe and Reibold, Robert},
abstractNote = {According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {9}
}
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Works referenced in this record:
Low temperature sintering and elongated grain growth of 6H-SiC powder with AlB 2 and C additives
journal, February 1999
- Tanaka, Hidehiko; Zhou, You
- Journal of Materials Research, Vol. 14, Issue 2