Sol-gel process for the manufacture of high power switches
Abstract
According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1326800
- Patent Number(s):
- 9455366
- Application Number:
- 13/843,863
- Assignee:
- Lawrence Livermore National Security, LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Mar 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Landingham, Richard L., Satcher, Jr, Joe, and Reibold, Robert. Sol-gel process for the manufacture of high power switches. United States: N. p., 2016.
Web.
Landingham, Richard L., Satcher, Jr, Joe, & Reibold, Robert. Sol-gel process for the manufacture of high power switches. United States.
Landingham, Richard L., Satcher, Jr, Joe, and Reibold, Robert. Tue .
"Sol-gel process for the manufacture of high power switches". United States. https://www.osti.gov/servlets/purl/1326800.
@article{osti_1326800,
title = {Sol-gel process for the manufacture of high power switches},
author = {Landingham, Richard L. and Satcher, Jr, Joe and Reibold, Robert},
abstractNote = {According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 27 00:00:00 EDT 2016},
month = {Tue Sep 27 00:00:00 EDT 2016}
}
Works referenced in this record:
Metal redistribution by rapid thermal processing
patent, January 1988
- Wilson, Syd R.; Paulson, Wayne M.; Varker, Charles J.
- US Patent Document 4,717,588
Photoconductive switch with multiple layers
patent, February 2001
- Bernhoff, Hans; Isberg, Jan
- US Patent Document 6,194,699
Photo-conductive switch having an improved semiconductor structure
patent, June 2001
- Kaneko, Yasuhisa; Saito, Mitsuchika; Low, Thomas S.
- US Patent Document 6,252,221
Nanoparticles, methods of making, and applications using same
patent, December 2010
- Yang, Zhihao; Wang, Hao; Xu, Zhiyong
- US Patent Document 7,850,933
Method of forming a passivated densified nanoparticle thin film on a substrate
patent, December 2010
- Poplavskyy, Dmitry; Kelman, Maxim; Terry, Mason
- US Patent Document 7,851,336
Optically initiated silicon carbide high voltage switch
patent, February 2011
- Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.
- US Patent Document 7,893,541
Junction formation on wafer substrates using group IV nanoparticles
patent, April 2011
- Terry, Mason; Antoniadis, Homer; Poplavskyy, Dmitry
- US Patent Document 7,923,368
Gas separation membrane system and method of making thereof using nanoscale metal material
patent, June 2011
- Saukaitis, John Charles; Del Paggio, Alan Anthony
- US Patent Document 7,959,711
Optically-initiated silicon carbide high voltage switch
patent, February 2012
- Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.
- US Patent Document 8,125,089
Method for controlled growth of silicon carbide and structures produced by same
patent, February 2013
- Leonard, Robert Tyler; Hobgood, Hudson M.; Thore, William A.
- US Patent Document 8,377,806
Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof
patent, November 2014
- Tezuka, Sachiaki; Jinbo, Yasuhiro; Sasaki, Toshinari
- US Patent Document 8,884,297
Transparent ceramic photo-optical semiconductor high power switches
patent, January 2016
- Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.
- US Patent Document 9,240,506
Transparent Conductors Incorporating Additives And Related Manufacturing Methods
patent-application, January 2013
- Srinivas, Arjun; Young, Michael; Robinson, Matthew
- US Patent Application 13/536968; 20130000952
Low temperature sintering and elongated grain growth of 6H-SiC powder with AlB 2 and C additives
journal, February 1999
- Tanaka, Hidehiko; Zhou, You
- Journal of Materials Research, Vol. 14, Issue 2