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Title: Megavoltage imaging with a photoconductor based sensor

Abstract

A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.

Inventors:
 [1];  [2]
  1. Los Altos, CA
  2. Mountain View, CA
Issue Date:
Research Org.:
Varian Medical Systems, Inc. (Palo Alto, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1015316
Patent Number(s):
7,884,438
Application Number:
US Patent Application 11/193,162
Assignee:
Varian Medical Systems, Inc. (Palo Alto, CA) ORO
DOE Contract Number:  
AC05-00OR22800
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Partain, Larry Dean, and Zentai, George. Megavoltage imaging with a photoconductor based sensor. United States: N. p., 2011. Web.
Partain, Larry Dean, & Zentai, George. Megavoltage imaging with a photoconductor based sensor. United States.
Partain, Larry Dean, and Zentai, George. Tue . "Megavoltage imaging with a photoconductor based sensor". United States. https://www.osti.gov/servlets/purl/1015316.
@article{osti_1015316,
title = {Megavoltage imaging with a photoconductor based sensor},
author = {Partain, Larry Dean and Zentai, George},
abstractNote = {A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {2}
}

Patent:

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