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Title: Materials Data on Al2Ga2Bi2O9 by Materials Project

Abstract

Ga2Al2Bi2O9 crystallizes in the orthorhombic Pbam space group. The structure is three-dimensional. Ga3+ is bonded to six O2- atoms to form GaO6 octahedra that share corners with four equivalent AlO4 tetrahedra and edges with two equivalent GaO6 octahedra. There are a spread of Ga–O bond distances ranging from 1.95–2.06 Å. Al3+ is bonded to four O2- atoms to form AlO4 tetrahedra that share corners with four equivalent GaO6 octahedra and a cornercorner with one AlO4 tetrahedra. The corner-sharing octahedra tilt angles range from 48–58°. There are a spread of Al–O bond distances ranging from 1.76–1.82 Å. Bi3+ is bonded in a 6-coordinate geometry to six O2- atoms. There are a spread of Bi–O bond distances ranging from 2.19–2.97 Å. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a linear geometry to two equivalent Al3+ atoms. In the second O2- site, O2- is bonded in a distorted T-shaped geometry to two equivalent Ga3+ and one Al3+ atom. In the third O2- site, O2- is bonded in a 4-coordinate geometry to two equivalent Ga3+ and two equivalent Bi3+ atoms. In the fourth O2- site, O2- is bonded in a 3-coordinate geometry to one Ga3+, onemore » Al3+, and two equivalent Bi3+ atoms.« less

Publication Date:
Other Number(s):
mp-1228996
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Al2Ga2Bi2O9; Al-Bi-Ga-O
OSTI Identifier:
1748939
DOI:
https://doi.org/10.17188/1748939

Citation Formats

The Materials Project. Materials Data on Al2Ga2Bi2O9 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1748939.
The Materials Project. Materials Data on Al2Ga2Bi2O9 by Materials Project. United States. doi:https://doi.org/10.17188/1748939
The Materials Project. 2020. "Materials Data on Al2Ga2Bi2O9 by Materials Project". United States. doi:https://doi.org/10.17188/1748939. https://www.osti.gov/servlets/purl/1748939. Pub date:Thu Apr 30 00:00:00 EDT 2020
@article{osti_1748939,
title = {Materials Data on Al2Ga2Bi2O9 by Materials Project},
author = {The Materials Project},
abstractNote = {Ga2Al2Bi2O9 crystallizes in the orthorhombic Pbam space group. The structure is three-dimensional. Ga3+ is bonded to six O2- atoms to form GaO6 octahedra that share corners with four equivalent AlO4 tetrahedra and edges with two equivalent GaO6 octahedra. There are a spread of Ga–O bond distances ranging from 1.95–2.06 Å. Al3+ is bonded to four O2- atoms to form AlO4 tetrahedra that share corners with four equivalent GaO6 octahedra and a cornercorner with one AlO4 tetrahedra. The corner-sharing octahedra tilt angles range from 48–58°. There are a spread of Al–O bond distances ranging from 1.76–1.82 Å. Bi3+ is bonded in a 6-coordinate geometry to six O2- atoms. There are a spread of Bi–O bond distances ranging from 2.19–2.97 Å. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a linear geometry to two equivalent Al3+ atoms. In the second O2- site, O2- is bonded in a distorted T-shaped geometry to two equivalent Ga3+ and one Al3+ atom. In the third O2- site, O2- is bonded in a 4-coordinate geometry to two equivalent Ga3+ and two equivalent Bi3+ atoms. In the fourth O2- site, O2- is bonded in a 3-coordinate geometry to one Ga3+, one Al3+, and two equivalent Bi3+ atoms.},
doi = {10.17188/1748939},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}