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Title: Materials Data on Ho5(SiSb)2 by Materials Project

Abstract

Ho5(SiSb)2 crystallizes in the orthorhombic Cmce space group. The structure is three-dimensional. there are two inequivalent Ho sites. In the first Ho site, Ho is bonded to three equivalent Si and three equivalent Sb atoms to form distorted HoSi3Sb3 pentagonal pyramids that share corners with three equivalent HoSi4Sb2 octahedra, corners with ten equivalent HoSi3Sb3 pentagonal pyramids, edges with seven equivalent HoSi3Sb3 pentagonal pyramids, faces with two equivalent HoSi4Sb2 octahedra, and faces with two equivalent HoSi3Sb3 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 36–41°. There are a spread of Ho–Si bond distances ranging from 2.94–3.02 Å. There are a spread of Ho–Sb bond distances ranging from 3.13–3.17 Å. In the second Ho site, Ho is bonded to four equivalent Si and two equivalent Sb atoms to form HoSi4Sb2 octahedra that share corners with four equivalent HoSi4Sb2 octahedra, corners with twelve equivalent HoSi3Sb3 pentagonal pyramids, and faces with eight equivalent HoSi3Sb3 pentagonal pyramids. The corner-sharing octahedral tilt angles are 50°. There are two shorter (3.05 Å) and two longer (3.07 Å) Ho–Si bond lengths. Both Ho–Sb bond lengths are 3.10 Å. Si is bonded in a 8-coordinate geometry to eight Ho atoms. Sb is bonded to seven Ho atoms tomore » form a mixture of distorted edge and corner-sharing SbHo7 pentagonal bipyramids.« less

Authors:
Publication Date:
Other Number(s):
mp-1212206
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Ho5(SiSb)2; Ho-Sb-Si
OSTI Identifier:
1701669
DOI:
https://doi.org/10.17188/1701669

Citation Formats

The Materials Project. Materials Data on Ho5(SiSb)2 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1701669.
The Materials Project. Materials Data on Ho5(SiSb)2 by Materials Project. United States. doi:https://doi.org/10.17188/1701669
The Materials Project. 2020. "Materials Data on Ho5(SiSb)2 by Materials Project". United States. doi:https://doi.org/10.17188/1701669. https://www.osti.gov/servlets/purl/1701669. Pub date:Sat May 02 00:00:00 EDT 2020
@article{osti_1701669,
title = {Materials Data on Ho5(SiSb)2 by Materials Project},
author = {The Materials Project},
abstractNote = {Ho5(SiSb)2 crystallizes in the orthorhombic Cmce space group. The structure is three-dimensional. there are two inequivalent Ho sites. In the first Ho site, Ho is bonded to three equivalent Si and three equivalent Sb atoms to form distorted HoSi3Sb3 pentagonal pyramids that share corners with three equivalent HoSi4Sb2 octahedra, corners with ten equivalent HoSi3Sb3 pentagonal pyramids, edges with seven equivalent HoSi3Sb3 pentagonal pyramids, faces with two equivalent HoSi4Sb2 octahedra, and faces with two equivalent HoSi3Sb3 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 36–41°. There are a spread of Ho–Si bond distances ranging from 2.94–3.02 Å. There are a spread of Ho–Sb bond distances ranging from 3.13–3.17 Å. In the second Ho site, Ho is bonded to four equivalent Si and two equivalent Sb atoms to form HoSi4Sb2 octahedra that share corners with four equivalent HoSi4Sb2 octahedra, corners with twelve equivalent HoSi3Sb3 pentagonal pyramids, and faces with eight equivalent HoSi3Sb3 pentagonal pyramids. The corner-sharing octahedral tilt angles are 50°. There are two shorter (3.05 Å) and two longer (3.07 Å) Ho–Si bond lengths. Both Ho–Sb bond lengths are 3.10 Å. Si is bonded in a 8-coordinate geometry to eight Ho atoms. Sb is bonded to seven Ho atoms to form a mixture of distorted edge and corner-sharing SbHo7 pentagonal bipyramids.},
doi = {10.17188/1701669},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat May 02 00:00:00 EDT 2020},
month = {Sat May 02 00:00:00 EDT 2020}
}