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Title: Materials Data on Ho2Si4Mo3 by Materials Project

Abstract

Ho2Mo3Si4 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Ho3+ is bonded to seven Si4- atoms to form distorted HoSi7 pentagonal bipyramids that share corners with four equivalent MoSi6 octahedra, corners with six equivalent HoSi7 pentagonal bipyramids, corners with five equivalent MoSi6 pentagonal pyramids, edges with three equivalent HoSi7 pentagonal bipyramids, edges with two equivalent MoSi6 pentagonal pyramids, faces with two equivalent MoSi6 octahedra, faces with two equivalent HoSi7 pentagonal bipyramids, and faces with four equivalent MoSi6 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 44–51°. There are a spread of Ho–Si bond distances ranging from 2.81–3.04 Å. There are two inequivalent Mo+3.33+ sites. In the first Mo+3.33+ site, Mo+3.33+ is bonded to six Si4- atoms to form MoSi6 octahedra that share corners with four equivalent MoSi6 octahedra, corners with eight equivalent HoSi7 pentagonal bipyramids, corners with six equivalent MoSi6 pentagonal pyramids, faces with four equivalent HoSi7 pentagonal bipyramids, and faces with four equivalent MoSi6 pentagonal pyramids. The corner-sharing octahedral tilt angles are 51°. There are a spread of Mo–Si bond distances ranging from 2.66–2.70 Å. In the second Mo+3.33+ site, Mo+3.33+ is bonded to six Si4- atoms to form distorted MoSi6 pentagonal pyramids that sharemore » corners with three equivalent MoSi6 octahedra, corners with five equivalent HoSi7 pentagonal bipyramids, corners with four equivalent MoSi6 pentagonal pyramids, edges with two equivalent HoSi7 pentagonal bipyramids, edges with four equivalent MoSi6 pentagonal pyramids, faces with two equivalent MoSi6 octahedra, and faces with four equivalent HoSi7 pentagonal bipyramids. The corner-sharing octahedra tilt angles range from 40–41°. There are a spread of Mo–Si bond distances ranging from 2.54–2.64 Å. There are two inequivalent Si4- sites. In the first Si4- site, Si4- is bonded in a 9-coordinate geometry to four equivalent Ho3+, four Mo+3.33+, and one Si4- atom. The Si–Si bond length is 2.55 Å. In the second Si4- site, Si4- is bonded in a 9-coordinate geometry to three equivalent Ho3+, five Mo+3.33+, and one Si4- atom. The Si–Si bond length is 2.54 Å.« less

Authors:
Publication Date:
Other Number(s):
mp-1105923
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Ho2Si4Mo3; Ho-Mo-Si
OSTI Identifier:
1685185
DOI:
https://doi.org/10.17188/1685185

Citation Formats

The Materials Project. Materials Data on Ho2Si4Mo3 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1685185.
The Materials Project. Materials Data on Ho2Si4Mo3 by Materials Project. United States. doi:https://doi.org/10.17188/1685185
The Materials Project. 2020. "Materials Data on Ho2Si4Mo3 by Materials Project". United States. doi:https://doi.org/10.17188/1685185. https://www.osti.gov/servlets/purl/1685185. Pub date:Mon May 04 00:00:00 EDT 2020
@article{osti_1685185,
title = {Materials Data on Ho2Si4Mo3 by Materials Project},
author = {The Materials Project},
abstractNote = {Ho2Mo3Si4 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Ho3+ is bonded to seven Si4- atoms to form distorted HoSi7 pentagonal bipyramids that share corners with four equivalent MoSi6 octahedra, corners with six equivalent HoSi7 pentagonal bipyramids, corners with five equivalent MoSi6 pentagonal pyramids, edges with three equivalent HoSi7 pentagonal bipyramids, edges with two equivalent MoSi6 pentagonal pyramids, faces with two equivalent MoSi6 octahedra, faces with two equivalent HoSi7 pentagonal bipyramids, and faces with four equivalent MoSi6 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 44–51°. There are a spread of Ho–Si bond distances ranging from 2.81–3.04 Å. There are two inequivalent Mo+3.33+ sites. In the first Mo+3.33+ site, Mo+3.33+ is bonded to six Si4- atoms to form MoSi6 octahedra that share corners with four equivalent MoSi6 octahedra, corners with eight equivalent HoSi7 pentagonal bipyramids, corners with six equivalent MoSi6 pentagonal pyramids, faces with four equivalent HoSi7 pentagonal bipyramids, and faces with four equivalent MoSi6 pentagonal pyramids. The corner-sharing octahedral tilt angles are 51°. There are a spread of Mo–Si bond distances ranging from 2.66–2.70 Å. In the second Mo+3.33+ site, Mo+3.33+ is bonded to six Si4- atoms to form distorted MoSi6 pentagonal pyramids that share corners with three equivalent MoSi6 octahedra, corners with five equivalent HoSi7 pentagonal bipyramids, corners with four equivalent MoSi6 pentagonal pyramids, edges with two equivalent HoSi7 pentagonal bipyramids, edges with four equivalent MoSi6 pentagonal pyramids, faces with two equivalent MoSi6 octahedra, and faces with four equivalent HoSi7 pentagonal bipyramids. The corner-sharing octahedra tilt angles range from 40–41°. There are a spread of Mo–Si bond distances ranging from 2.54–2.64 Å. There are two inequivalent Si4- sites. In the first Si4- site, Si4- is bonded in a 9-coordinate geometry to four equivalent Ho3+, four Mo+3.33+, and one Si4- atom. The Si–Si bond length is 2.55 Å. In the second Si4- site, Si4- is bonded in a 9-coordinate geometry to three equivalent Ho3+, five Mo+3.33+, and one Si4- atom. The Si–Si bond length is 2.54 Å.},
doi = {10.17188/1685185},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}