Materials Data on In12Ga4Ir2O15 by Materials Project
Abstract
(Ir)2InIn11Ga4O15 crystallizes in the orthorhombic Pnn2 space group. The structure is three-dimensional and consists of two indium, elemental molecules; four iridium atom molecules; and one In11Ga4O15 framework. In the In11Ga4O15 framework, there are six inequivalent In1+ sites. In the first In1+ site, In1+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of In–O bond distances ranging from 2.23–2.45 Å. In the second In1+ site, In1+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of In–O bond distances ranging from 2.18–2.40 Å. In the third In1+ site, In1+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of In–O bond distances ranging from 2.12–2.42 Å. In the fourth In1+ site, In1+ is bonded in a 3-coordinate geometry to three O2- atoms. There are a spread of In–O bond distances ranging from 2.13–2.31 Å. In the fifth In1+ site, In1+ is bonded in a 3-coordinate geometry to three O2- atoms. There are one shorter (2.14 Å) and two longer (2.23 Å) In–O bond lengths. In the sixth In1+ site, In1+ is bonded in a distorted L-shaped geometry to two equivalent O2- atoms. Both In–O bondmore »
- Authors:
- Publication Date:
- Other Number(s):
- mp-1204264
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Collaborations:
- MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE
- Keywords:
- crystal structure; In12Ga4Ir2O15; Ga-In-Ir-O
- OSTI Identifier:
- 1683870
- DOI:
- https://doi.org/10.17188/1683870
Citation Formats
The Materials Project. Materials Data on In12Ga4Ir2O15 by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1683870.
The Materials Project. Materials Data on In12Ga4Ir2O15 by Materials Project. United States. doi:https://doi.org/10.17188/1683870
The Materials Project. 2020.
"Materials Data on In12Ga4Ir2O15 by Materials Project". United States. doi:https://doi.org/10.17188/1683870. https://www.osti.gov/servlets/purl/1683870. Pub date:Thu Apr 30 00:00:00 EDT 2020
@article{osti_1683870,
title = {Materials Data on In12Ga4Ir2O15 by Materials Project},
author = {The Materials Project},
abstractNote = {(Ir)2InIn11Ga4O15 crystallizes in the orthorhombic Pnn2 space group. The structure is three-dimensional and consists of two indium, elemental molecules; four iridium atom molecules; and one In11Ga4O15 framework. In the In11Ga4O15 framework, there are six inequivalent In1+ sites. In the first In1+ site, In1+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of In–O bond distances ranging from 2.23–2.45 Å. In the second In1+ site, In1+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of In–O bond distances ranging from 2.18–2.40 Å. In the third In1+ site, In1+ is bonded in a 4-coordinate geometry to four O2- atoms. There are a spread of In–O bond distances ranging from 2.12–2.42 Å. In the fourth In1+ site, In1+ is bonded in a 3-coordinate geometry to three O2- atoms. There are a spread of In–O bond distances ranging from 2.13–2.31 Å. In the fifth In1+ site, In1+ is bonded in a 3-coordinate geometry to three O2- atoms. There are one shorter (2.14 Å) and two longer (2.23 Å) In–O bond lengths. In the sixth In1+ site, In1+ is bonded in a distorted L-shaped geometry to two equivalent O2- atoms. Both In–O bond lengths are 2.97 Å. There are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded in a tetrahedral geometry to four O2- atoms. There are a spread of Ga–O bond distances ranging from 1.86–1.94 Å. In the second Ga3+ site, Ga3+ is bonded to four O2- atoms to form distorted corner-sharing GaO4 tetrahedra. There are a spread of Ga–O bond distances ranging from 1.83–1.90 Å. There are eight inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 150 degrees geometry to two equivalent Ga3+ atoms. In the second O2- site, O2- is bonded in a 4-coordinate geometry to three In1+ and one Ga3+ atom. In the third O2- site, O2- is bonded to three In1+ and one Ga3+ atom to form corner-sharing OIn3Ga tetrahedra. In the fourth O2- site, O2- is bonded to three In1+ and one Ga3+ atom to form corner-sharing OIn3Ga tetrahedra. In the fifth O2- site, O2- is bonded in a 3-coordinate geometry to two In1+ and one Ga3+ atom. In the sixth O2- site, O2- is bonded in a 4-coordinate geometry to three In1+ and one Ga3+ atom. In the seventh O2- site, O2- is bonded in a trigonal non-coplanar geometry to three In1+ and one Ga3+ atom. In the eighth O2- site, O2- is bonded in a trigonal non-coplanar geometry to two In1+ and one Ga3+ atom.},
doi = {10.17188/1683870},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}