U.S. Department of EnergyOffice of Scientific and Technical Information
Materials Data on GaN by Materials Project
Abstract
GaN is Boron Nitride-like structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is two-dimensional and consists of two GaN sheets oriented in the (0, 0, 1) direction. Ga3+ is bonded in a trigonal planar geometry to three equivalent N3- atoms. All Ga–N bond lengths are 1.85 Å. N3- is bonded in a trigonal planar geometry to three equivalent Ga3+ atoms.
- Publication Date:
- Other Number(s):
- mp-1007824
- DOE Contract Number:
- AC02-05CH11231
- Research Org.:
- LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Collaborations:
- The Materials Project; MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE; Ga-N; GaN; crystal structure
- OSTI Identifier:
- 1324737
- DOI:
- https://doi.org/10.17188/1324737
Citation Formats
Materials Data on GaN by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1324737.
Materials Data on GaN by Materials Project. United States. doi:https://doi.org/10.17188/1324737
2020.
"Materials Data on GaN by Materials Project". United States. doi:https://doi.org/10.17188/1324737. https://www.osti.gov/servlets/purl/1324737. Pub date:Thu Jul 16 04:00:00 UTC 2020
@article{osti_1324737,
title = {Materials Data on GaN by Materials Project},
abstractNote = {GaN is Boron Nitride-like structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is two-dimensional and consists of two GaN sheets oriented in the (0, 0, 1) direction. Ga3+ is bonded in a trigonal planar geometry to three equivalent N3- atoms. All Ga–N bond lengths are 1.85 Å. N3- is bonded in a trigonal planar geometry to three equivalent Ga3+ atoms.},
doi = {10.17188/1324737},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}
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