U.S. Department of EnergyOffice of Scientific and Technical Information
Materials Data on Ga3NO3 by Materials Project
Abstract
Ga3NO3 is Spinel-like structured and crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are twelve inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to two N3- and four O2- atoms to form GaN2O4 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. Both Ga–N bond lengths are 1.98 Å. There are a spread of Ga–O bond distances ranging from 2.09–2.11 Å. In the second Ga3+ site, Ga3+ is bonded to four O2- atoms to form corner-sharing GaO4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–59°. There is three shorter (1.89 Å) and one longer (1.90 Å) Ga–O bond length. In the third Ga3+ site, Ga3+ is bonded to two N3- and four O2- atoms to form GaN2O4 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. Both Ga–N bond lengths are 1.99 Å. There are a spread of Ga–O bond distances ranging from 2.08–2.10 Å. In the fourth Ga3+ site, Ga3+ is bonded to one N3- and five O2- atoms to form GaNO5 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. The Ga–N bond length ismore »
- Authors:
- Publication Date:
- Other Number(s):
- mp-754991
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Collaborations:
- MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE
- Keywords:
- crystal structure; Ga3NO3; Ga-N-O
- OSTI Identifier:
- 1289658
- DOI:
- https://doi.org/10.17188/1289658
Citation Formats
The Materials Project. Materials Data on Ga3NO3 by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1289658.
The Materials Project. Materials Data on Ga3NO3 by Materials Project. United States. doi:https://doi.org/10.17188/1289658
The Materials Project. 2020.
"Materials Data on Ga3NO3 by Materials Project". United States. doi:https://doi.org/10.17188/1289658. https://www.osti.gov/servlets/purl/1289658. Pub date:Thu Apr 30 00:00:00 EDT 2020
@article{osti_1289658,
title = {Materials Data on Ga3NO3 by Materials Project},
author = {The Materials Project},
abstractNote = {Ga3NO3 is Spinel-like structured and crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are twelve inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to two N3- and four O2- atoms to form GaN2O4 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. Both Ga–N bond lengths are 1.98 Å. There are a spread of Ga–O bond distances ranging from 2.09–2.11 Å. In the second Ga3+ site, Ga3+ is bonded to four O2- atoms to form corner-sharing GaO4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–59°. There is three shorter (1.89 Å) and one longer (1.90 Å) Ga–O bond length. In the third Ga3+ site, Ga3+ is bonded to two N3- and four O2- atoms to form GaN2O4 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. Both Ga–N bond lengths are 1.99 Å. There are a spread of Ga–O bond distances ranging from 2.08–2.10 Å. In the fourth Ga3+ site, Ga3+ is bonded to one N3- and five O2- atoms to form GaNO5 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. The Ga–N bond length is 1.96 Å. There are a spread of Ga–O bond distances ranging from 2.04–2.07 Å. In the fifth Ga3+ site, Ga3+ is bonded to one N3- and five O2- atoms to form GaNO5 octahedra that share corners with six GaO4 tetrahedra and edges with six GaN2O4 octahedra. The Ga–N bond length is 1.96 Å. There are a spread of Ga–O bond distances ranging from 2.04–2.08 Å. In the sixth Ga3+ site, Ga3+ is bonded to four O2- atoms to form corner-sharing GaO4 tetrahedra. The corner-sharing octahedra tilt angles range from 55–58°. There is three shorter (1.89 Å) and one longer (1.90 Å) Ga–O bond length. In the seventh Ga3+ site, Ga3+ is bonded to two N3- and four O2- atoms to form GaN2O4 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaO6 octahedra. There is one shorter (1.97 Å) and one longer (1.98 Å) Ga–N bond length. There are a spread of Ga–O bond distances ranging from 2.07–2.13 Å. In the eighth Ga3+ site, Ga3+ is bonded to two N3- and four O2- atoms to form GaN2O4 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. Both Ga–N bond lengths are 1.99 Å. There are a spread of Ga–O bond distances ranging from 2.08–2.10 Å. In the ninth Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form corner-sharing GaN2O2 tetrahedra. The corner-sharing octahedra tilt angles range from 54–64°. There is one shorter (1.94 Å) and one longer (1.96 Å) Ga–N bond length. There is one shorter (1.97 Å) and one longer (1.98 Å) Ga–O bond length. In the tenth Ga3+ site, Ga3+ is bonded to two N3- and four O2- atoms to form GaN2O4 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaO6 octahedra. Both Ga–N bond lengths are 1.98 Å. There are a spread of Ga–O bond distances ranging from 2.06–2.13 Å. In the eleventh Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form corner-sharing GaN2O2 tetrahedra. The corner-sharing octahedra tilt angles range from 54–64°. There is one shorter (1.94 Å) and one longer (1.96 Å) Ga–N bond length. Both Ga–O bond lengths are 1.98 Å. In the twelfth Ga3+ site, Ga3+ is bonded to six O2- atoms to form GaO6 octahedra that share corners with six GaN2O2 tetrahedra and edges with six GaN2O4 octahedra. There are a spread of Ga–O bond distances ranging from 2.01–2.03 Å. There are four inequivalent N3- sites. In the first N3- site, N3- is bonded to four Ga3+ atoms to form distorted corner-sharing NGa4 tetrahedra. In the second N3- site, N3- is bonded in a distorted rectangular see-saw-like geometry to four Ga3+ atoms. In the third N3- site, N3- is bonded to four Ga3+ atoms to form distorted corner-sharing NGa4 tetrahedra. In the fourth N3- site, N3- is bonded in a distorted rectangular see-saw-like geometry to four Ga3+ atoms. There are twelve inequivalent O2- sites. In the first O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the second O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the third O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the fourth O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the fifth O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the sixth O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the seventh O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the eighth O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the ninth O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the tenth O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the eleventh O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the twelfth O2- site, O2- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms.},
doi = {10.17188/1289658},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Apr 30 00:00:00 EDT 2020},
month = {Thu Apr 30 00:00:00 EDT 2020}
}
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