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Title: Materials Data on ZnGa3N3O by Materials Project

Abstract

ZnGa3N3O is Stannite-like structured and crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are four inequivalent Zn2+ sites. In the first Zn2+ site, Zn2+ is bonded to one N3- and three O2- atoms to form ZnNO3 tetrahedra that share corners with four ZnN3O tetrahedra and corners with eight GaN2O2 tetrahedra. The Zn–N bond length is 1.93 Å. There are a spread of Zn–O bond distances ranging from 1.98–2.24 Å. In the second Zn2+ site, Zn2+ is bonded to three N3- and one O2- atom to form ZnN3O tetrahedra that share corners with three ZnNO3 tetrahedra and corners with nine GaN3O tetrahedra. There is two shorter (1.97 Å) and one longer (1.99 Å) Zn–N bond length. The Zn–O bond length is 2.28 Å. In the third Zn2+ site, Zn2+ is bonded to two N3- and two O2- atoms to form ZnN2O2 tetrahedra that share corners with three ZnNO3 tetrahedra and corners with nine GaN2O2 tetrahedra. There is one shorter (1.93 Å) and one longer (1.96 Å) Zn–N bond length. There are one shorter (1.99 Å) and one longer (2.26 Å) Zn–O bond lengths. In the fourth Zn2+ site, Zn2+ is bonded to three N3- and one O2-more » atom to form ZnN3O tetrahedra that share corners with four ZnNO3 tetrahedra and corners with eight GaN2O2 tetrahedra. There is two shorter (1.98 Å) and one longer (2.00 Å) Zn–N bond length. The Zn–O bond length is 2.24 Å. There are twelve inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form GaN2O2 tetrahedra that share corners with two ZnNO3 tetrahedra and corners with ten GaN2O2 tetrahedra. There is one shorter (1.91 Å) and one longer (1.97 Å) Ga–N bond length. Both Ga–O bond lengths are 2.00 Å. In the second Ga3+ site, Ga3+ is bonded to three N3- and one O2- atom to form GaN3O tetrahedra that share corners with five ZnNO3 tetrahedra and corners with seven GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.88–2.01 Å. The Ga–O bond length is 1.96 Å. In the third Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form GaN2O2 tetrahedra that share corners with six ZnNO3 tetrahedra and corners with six GaN2O2 tetrahedra. There is one shorter (1.92 Å) and one longer (2.00 Å) Ga–N bond length. There is one shorter (1.89 Å) and one longer (1.94 Å) Ga–O bond length. In the fourth Ga3+ site, Ga3+ is bonded to three N3- and one O2- atom to form GaN3O tetrahedra that share a cornercorner with one ZnN2O2 tetrahedra and corners with eleven GaN2O2 tetrahedra. There is one shorter (1.92 Å) and two longer (1.98 Å) Ga–N bond length. The Ga–O bond length is 2.02 Å. In the fifth Ga3+ site, Ga3+ is bonded to three N3- and one O2- atom to form GaN3O tetrahedra that share a cornercorner with one ZnNO3 tetrahedra and corners with eleven GaN2O2 tetrahedra. There is one shorter (1.92 Å) and two longer (1.98 Å) Ga–N bond length. The Ga–O bond length is 2.03 Å. In the sixth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with five ZnN3O tetrahedra and corners with seven GaN3O tetrahedra. There are a spread of Ga–N bond distances ranging from 1.91–2.02 Å. In the seventh Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with two ZnN3O tetrahedra and corners with ten GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.91–2.02 Å. In the eighth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share a cornercorner with one ZnN3O tetrahedra and corners with eleven GaN3O tetrahedra. There are a spread of Ga–N bond distances ranging from 1.92–2.01 Å. In the ninth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share a cornercorner with one ZnN3O tetrahedra and corners with eleven GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.93–2.01 Å. In the tenth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with two ZnN3O tetrahedra and corners with ten GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.90–2.02 Å. In the eleventh Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form GaN2O2 tetrahedra that share corners with two ZnNO3 tetrahedra and corners with ten GaN2O2 tetrahedra. There is one shorter (1.91 Å) and one longer (1.96 Å) Ga–N bond length. There are one shorter (2.00 Å) and one longer (2.01 Å) Ga–O bond lengths. In the twelfth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with six ZnNO3 tetrahedra and corners with six GaN3O tetrahedra. There are a spread of Ga–N bond distances ranging from 1.92–1.98 Å. There are twelve inequivalent N3- sites. In the first N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with six NGa4 tetrahedra and corners with six OZn3Ga tetrahedra. In the second N3- site, N3- is bonded to two Zn2+ and two Ga3+ atoms to form NZn2Ga2 tetrahedra that share corners with six NZnGa3 tetrahedra and corners with six OZn3Ga tetrahedra. In the third N3- site, N3- is bonded to two Zn2+ and two Ga3+ atoms to form NZn2Ga2 tetrahedra that share corners with two OZn3Ga tetrahedra and corners with ten NZnGa3 tetrahedra. In the fourth N3- site, N3- is bonded to one Zn2+ and three Ga3+ atoms to form NZnGa3 tetrahedra that share a cornercorner with one OZn2Ga2 tetrahedra and corners with eleven NZn2Ga2 tetrahedra. In the fifth N3- site, N3- is bonded to two Zn2+ and two Ga3+ atoms to form NZn2Ga2 tetrahedra that share corners with two OZn3Ga tetrahedra and corners with ten NZn2Ga2 tetrahedra. In the sixth N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with two OZnGa3 tetrahedra and corners with ten NGa4 tetrahedra. In the seventh N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with two OZnGa3 tetrahedra and corners with ten NZnGa3 tetrahedra. In the eighth N3- site, N3- is bonded to one Zn2+ and three Ga3+ atoms to form NZnGa3 tetrahedra that share a cornercorner with one OZn3Ga tetrahedra and corners with eleven NZn2Ga2 tetrahedra. In the ninth N3- site, N3- is bonded to one Zn2+ and three Ga3+ atoms to form NZnGa3 tetrahedra that share corners with five OZn3Ga tetrahedra and corners with seven NGa4 tetrahedra. In the tenth N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with five OZnGa3 tetrahedra and corners with seven NGa4 tetrahedra. In the eleventh N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share a cornercorner with one OZnGa3 tetrahedra and corners with eleven NGa4 tetrahedra. In the twelfth N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share a cornercorner with one OZnGa3 tetrahedra and corners with eleven NGa4 tetrahedra. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded to three Zn2+ and one Ga3+ atom to form OZn3Ga tetrahedra that share corners with four OZnGa3 tetrahedra and corners with eight NGa4 tetrahedra. In the second O2- site, O2- is bonded to one Zn2+ and three Ga3+ atoms to form OZnGa3 tetrahedra that share corners with three OZn3Ga tetrahedra and corners with nine NGa4 tetrahedra. In the third O2- site, O2- is bonded to one Zn2+ and three Ga3+ atoms to form OZnGa3 tetrahedra that share corners with four OZn3Ga tetrahedra and corners with eight NGa4 tetrahedra. In the fourth O2- site, O2- is bonded to two Zn2+ and two Ga3+ atoms to form OZn2Ga2 tetrahedra that share corners with three OZn3Ga tetrahedra and corners with nine NGa4 tetrahedra.« less

Publication Date:
Other Number(s):
mp-554388
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; ZnGa3N3O; Ga-N-O-Zn
OSTI Identifier:
1267880
DOI:
10.17188/1267880

Citation Formats

The Materials Project. Materials Data on ZnGa3N3O by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1267880.
The Materials Project. Materials Data on ZnGa3N3O by Materials Project. United States. doi:10.17188/1267880.
The Materials Project. 2020. "Materials Data on ZnGa3N3O by Materials Project". United States. doi:10.17188/1267880. https://www.osti.gov/servlets/purl/1267880. Pub date:Wed Apr 29 00:00:00 EDT 2020
@article{osti_1267880,
title = {Materials Data on ZnGa3N3O by Materials Project},
author = {The Materials Project},
abstractNote = {ZnGa3N3O is Stannite-like structured and crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are four inequivalent Zn2+ sites. In the first Zn2+ site, Zn2+ is bonded to one N3- and three O2- atoms to form ZnNO3 tetrahedra that share corners with four ZnN3O tetrahedra and corners with eight GaN2O2 tetrahedra. The Zn–N bond length is 1.93 Å. There are a spread of Zn–O bond distances ranging from 1.98–2.24 Å. In the second Zn2+ site, Zn2+ is bonded to three N3- and one O2- atom to form ZnN3O tetrahedra that share corners with three ZnNO3 tetrahedra and corners with nine GaN3O tetrahedra. There is two shorter (1.97 Å) and one longer (1.99 Å) Zn–N bond length. The Zn–O bond length is 2.28 Å. In the third Zn2+ site, Zn2+ is bonded to two N3- and two O2- atoms to form ZnN2O2 tetrahedra that share corners with three ZnNO3 tetrahedra and corners with nine GaN2O2 tetrahedra. There is one shorter (1.93 Å) and one longer (1.96 Å) Zn–N bond length. There are one shorter (1.99 Å) and one longer (2.26 Å) Zn–O bond lengths. In the fourth Zn2+ site, Zn2+ is bonded to three N3- and one O2- atom to form ZnN3O tetrahedra that share corners with four ZnNO3 tetrahedra and corners with eight GaN2O2 tetrahedra. There is two shorter (1.98 Å) and one longer (2.00 Å) Zn–N bond length. The Zn–O bond length is 2.24 Å. There are twelve inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form GaN2O2 tetrahedra that share corners with two ZnNO3 tetrahedra and corners with ten GaN2O2 tetrahedra. There is one shorter (1.91 Å) and one longer (1.97 Å) Ga–N bond length. Both Ga–O bond lengths are 2.00 Å. In the second Ga3+ site, Ga3+ is bonded to three N3- and one O2- atom to form GaN3O tetrahedra that share corners with five ZnNO3 tetrahedra and corners with seven GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.88–2.01 Å. The Ga–O bond length is 1.96 Å. In the third Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form GaN2O2 tetrahedra that share corners with six ZnNO3 tetrahedra and corners with six GaN2O2 tetrahedra. There is one shorter (1.92 Å) and one longer (2.00 Å) Ga–N bond length. There is one shorter (1.89 Å) and one longer (1.94 Å) Ga–O bond length. In the fourth Ga3+ site, Ga3+ is bonded to three N3- and one O2- atom to form GaN3O tetrahedra that share a cornercorner with one ZnN2O2 tetrahedra and corners with eleven GaN2O2 tetrahedra. There is one shorter (1.92 Å) and two longer (1.98 Å) Ga–N bond length. The Ga–O bond length is 2.02 Å. In the fifth Ga3+ site, Ga3+ is bonded to three N3- and one O2- atom to form GaN3O tetrahedra that share a cornercorner with one ZnNO3 tetrahedra and corners with eleven GaN2O2 tetrahedra. There is one shorter (1.92 Å) and two longer (1.98 Å) Ga–N bond length. The Ga–O bond length is 2.03 Å. In the sixth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with five ZnN3O tetrahedra and corners with seven GaN3O tetrahedra. There are a spread of Ga–N bond distances ranging from 1.91–2.02 Å. In the seventh Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with two ZnN3O tetrahedra and corners with ten GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.91–2.02 Å. In the eighth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share a cornercorner with one ZnN3O tetrahedra and corners with eleven GaN3O tetrahedra. There are a spread of Ga–N bond distances ranging from 1.92–2.01 Å. In the ninth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share a cornercorner with one ZnN3O tetrahedra and corners with eleven GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.93–2.01 Å. In the tenth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with two ZnN3O tetrahedra and corners with ten GaN2O2 tetrahedra. There are a spread of Ga–N bond distances ranging from 1.90–2.02 Å. In the eleventh Ga3+ site, Ga3+ is bonded to two N3- and two O2- atoms to form GaN2O2 tetrahedra that share corners with two ZnNO3 tetrahedra and corners with ten GaN2O2 tetrahedra. There is one shorter (1.91 Å) and one longer (1.96 Å) Ga–N bond length. There are one shorter (2.00 Å) and one longer (2.01 Å) Ga–O bond lengths. In the twelfth Ga3+ site, Ga3+ is bonded to four N3- atoms to form GaN4 tetrahedra that share corners with six ZnNO3 tetrahedra and corners with six GaN3O tetrahedra. There are a spread of Ga–N bond distances ranging from 1.92–1.98 Å. There are twelve inequivalent N3- sites. In the first N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with six NGa4 tetrahedra and corners with six OZn3Ga tetrahedra. In the second N3- site, N3- is bonded to two Zn2+ and two Ga3+ atoms to form NZn2Ga2 tetrahedra that share corners with six NZnGa3 tetrahedra and corners with six OZn3Ga tetrahedra. In the third N3- site, N3- is bonded to two Zn2+ and two Ga3+ atoms to form NZn2Ga2 tetrahedra that share corners with two OZn3Ga tetrahedra and corners with ten NZnGa3 tetrahedra. In the fourth N3- site, N3- is bonded to one Zn2+ and three Ga3+ atoms to form NZnGa3 tetrahedra that share a cornercorner with one OZn2Ga2 tetrahedra and corners with eleven NZn2Ga2 tetrahedra. In the fifth N3- site, N3- is bonded to two Zn2+ and two Ga3+ atoms to form NZn2Ga2 tetrahedra that share corners with two OZn3Ga tetrahedra and corners with ten NZn2Ga2 tetrahedra. In the sixth N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with two OZnGa3 tetrahedra and corners with ten NGa4 tetrahedra. In the seventh N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with two OZnGa3 tetrahedra and corners with ten NZnGa3 tetrahedra. In the eighth N3- site, N3- is bonded to one Zn2+ and three Ga3+ atoms to form NZnGa3 tetrahedra that share a cornercorner with one OZn3Ga tetrahedra and corners with eleven NZn2Ga2 tetrahedra. In the ninth N3- site, N3- is bonded to one Zn2+ and three Ga3+ atoms to form NZnGa3 tetrahedra that share corners with five OZn3Ga tetrahedra and corners with seven NGa4 tetrahedra. In the tenth N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share corners with five OZnGa3 tetrahedra and corners with seven NGa4 tetrahedra. In the eleventh N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share a cornercorner with one OZnGa3 tetrahedra and corners with eleven NGa4 tetrahedra. In the twelfth N3- site, N3- is bonded to four Ga3+ atoms to form NGa4 tetrahedra that share a cornercorner with one OZnGa3 tetrahedra and corners with eleven NGa4 tetrahedra. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded to three Zn2+ and one Ga3+ atom to form OZn3Ga tetrahedra that share corners with four OZnGa3 tetrahedra and corners with eight NGa4 tetrahedra. In the second O2- site, O2- is bonded to one Zn2+ and three Ga3+ atoms to form OZnGa3 tetrahedra that share corners with three OZn3Ga tetrahedra and corners with nine NGa4 tetrahedra. In the third O2- site, O2- is bonded to one Zn2+ and three Ga3+ atoms to form OZnGa3 tetrahedra that share corners with four OZn3Ga tetrahedra and corners with eight NGa4 tetrahedra. In the fourth O2- site, O2- is bonded to two Zn2+ and two Ga3+ atoms to form OZn2Ga2 tetrahedra that share corners with three OZn3Ga tetrahedra and corners with nine NGa4 tetrahedra.},
doi = {10.17188/1267880},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {4}
}

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