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Title: Materials Data on Ga2S3 by Materials Project

Abstract

Ga2S3 crystallizes in the monoclinic Cc space group. The structure is three-dimensional. there are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four S2- atoms to form corner-sharing GaS4 tetrahedra. There are one shorter (2.22 Å) and three longer (2.35 Å) Ga–S bond lengths. In the second Ga3+ site, Ga3+ is bonded to four S2- atoms to form corner-sharing GaS4 tetrahedra. There are a spread of Ga–S bond distances ranging from 2.23–2.36 Å. There are three inequivalent S2- sites. In the first S2- site, S2- is bonded in a water-like geometry to two Ga3+ atoms. In the second S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the third S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms.

Authors:
Publication Date:
Other Number(s):
mp-32616
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Ga2S3; Ga-S
OSTI Identifier:
1206325
DOI:
https://doi.org/10.17188/1206325

Citation Formats

The Materials Project. Materials Data on Ga2S3 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1206325.
The Materials Project. Materials Data on Ga2S3 by Materials Project. United States. doi:https://doi.org/10.17188/1206325
The Materials Project. 2020. "Materials Data on Ga2S3 by Materials Project". United States. doi:https://doi.org/10.17188/1206325. https://www.osti.gov/servlets/purl/1206325. Pub date:Wed Jul 22 00:00:00 EDT 2020
@article{osti_1206325,
title = {Materials Data on Ga2S3 by Materials Project},
author = {The Materials Project},
abstractNote = {Ga2S3 crystallizes in the monoclinic Cc space group. The structure is three-dimensional. there are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four S2- atoms to form corner-sharing GaS4 tetrahedra. There are one shorter (2.22 Å) and three longer (2.35 Å) Ga–S bond lengths. In the second Ga3+ site, Ga3+ is bonded to four S2- atoms to form corner-sharing GaS4 tetrahedra. There are a spread of Ga–S bond distances ranging from 2.23–2.36 Å. There are three inequivalent S2- sites. In the first S2- site, S2- is bonded in a water-like geometry to two Ga3+ atoms. In the second S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the third S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms.},
doi = {10.17188/1206325},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jul 22 00:00:00 EDT 2020},
month = {Wed Jul 22 00:00:00 EDT 2020}
}