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Title: Materials Data on Sc2Re3Si4 by Materials Project

Abstract

Sc2Re3Si4 crystallizes in the tetragonal P4_12_12 space group. The structure is three-dimensional. Sc3+ is bonded to seven Si4- atoms to form ScSi7 pentagonal bipyramids that share corners with four equivalent ReSi6 octahedra, corners with six equivalent ScSi7 pentagonal bipyramids, corners with five equivalent ReSi6 pentagonal pyramids, edges with three equivalent ScSi7 pentagonal bipyramids, edges with two equivalent ReSi6 pentagonal pyramids, faces with two equivalent ReSi6 octahedra, faces with two equivalent ScSi7 pentagonal bipyramids, and faces with four equivalent ReSi6 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 41–50°. There are a spread of Sc–Si bond distances ranging from 2.71–2.93 Å. There are two inequivalent Re+3.33+ sites. In the first Re+3.33+ site, Re+3.33+ is bonded to six Si4- atoms to form ReSi6 octahedra that share corners with four equivalent ReSi6 octahedra, corners with eight equivalent ScSi7 pentagonal bipyramids, corners with six equivalent ReSi6 pentagonal pyramids, faces with four equivalent ScSi7 pentagonal bipyramids, and faces with four equivalent ReSi6 pentagonal pyramids. The corner-sharing octahedral tilt angles are 49°. There are a spread of Re–Si bond distances ranging from 2.52–2.63 Å. In the second Re+3.33+ site, Re+3.33+ is bonded to six Si4- atoms to form distorted ReSi6 pentagonal pyramids that share cornersmore » with three equivalent ReSi6 octahedra, corners with five equivalent ScSi7 pentagonal bipyramids, corners with four equivalent ReSi6 pentagonal pyramids, edges with two equivalent ScSi7 pentagonal bipyramids, edges with four equivalent ReSi6 pentagonal pyramids, faces with two equivalent ReSi6 octahedra, and faces with four equivalent ScSi7 pentagonal bipyramids. The corner-sharing octahedra tilt angles range from 37–46°. There are a spread of Re–Si bond distances ranging from 2.42–2.58 Å. There are two inequivalent Si4- sites. In the first Si4- site, Si4- is bonded in a 9-coordinate geometry to three equivalent Sc3+, five Re+3.33+, and one Si4- atom. The Si–Si bond length is 2.56 Å. In the second Si4- site, Si4- is bonded in a 9-coordinate geometry to four equivalent Sc3+, four Re+3.33+, and one Si4- atom.« less

Authors:
Publication Date:
Other Number(s):
mp-16794
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Sc2Re3Si4; Re-Sc-Si
OSTI Identifier:
1192171
DOI:
https://doi.org/10.17188/1192171

Citation Formats

The Materials Project. Materials Data on Sc2Re3Si4 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1192171.
The Materials Project. Materials Data on Sc2Re3Si4 by Materials Project. United States. doi:https://doi.org/10.17188/1192171
The Materials Project. 2020. "Materials Data on Sc2Re3Si4 by Materials Project". United States. doi:https://doi.org/10.17188/1192171. https://www.osti.gov/servlets/purl/1192171. Pub date:Wed Jul 22 00:00:00 EDT 2020
@article{osti_1192171,
title = {Materials Data on Sc2Re3Si4 by Materials Project},
author = {The Materials Project},
abstractNote = {Sc2Re3Si4 crystallizes in the tetragonal P4_12_12 space group. The structure is three-dimensional. Sc3+ is bonded to seven Si4- atoms to form ScSi7 pentagonal bipyramids that share corners with four equivalent ReSi6 octahedra, corners with six equivalent ScSi7 pentagonal bipyramids, corners with five equivalent ReSi6 pentagonal pyramids, edges with three equivalent ScSi7 pentagonal bipyramids, edges with two equivalent ReSi6 pentagonal pyramids, faces with two equivalent ReSi6 octahedra, faces with two equivalent ScSi7 pentagonal bipyramids, and faces with four equivalent ReSi6 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 41–50°. There are a spread of Sc–Si bond distances ranging from 2.71–2.93 Å. There are two inequivalent Re+3.33+ sites. In the first Re+3.33+ site, Re+3.33+ is bonded to six Si4- atoms to form ReSi6 octahedra that share corners with four equivalent ReSi6 octahedra, corners with eight equivalent ScSi7 pentagonal bipyramids, corners with six equivalent ReSi6 pentagonal pyramids, faces with four equivalent ScSi7 pentagonal bipyramids, and faces with four equivalent ReSi6 pentagonal pyramids. The corner-sharing octahedral tilt angles are 49°. There are a spread of Re–Si bond distances ranging from 2.52–2.63 Å. In the second Re+3.33+ site, Re+3.33+ is bonded to six Si4- atoms to form distorted ReSi6 pentagonal pyramids that share corners with three equivalent ReSi6 octahedra, corners with five equivalent ScSi7 pentagonal bipyramids, corners with four equivalent ReSi6 pentagonal pyramids, edges with two equivalent ScSi7 pentagonal bipyramids, edges with four equivalent ReSi6 pentagonal pyramids, faces with two equivalent ReSi6 octahedra, and faces with four equivalent ScSi7 pentagonal bipyramids. The corner-sharing octahedra tilt angles range from 37–46°. There are a spread of Re–Si bond distances ranging from 2.42–2.58 Å. There are two inequivalent Si4- sites. In the first Si4- site, Si4- is bonded in a 9-coordinate geometry to three equivalent Sc3+, five Re+3.33+, and one Si4- atom. The Si–Si bond length is 2.56 Å. In the second Si4- site, Si4- is bonded in a 9-coordinate geometry to four equivalent Sc3+, four Re+3.33+, and one Si4- atom.},
doi = {10.17188/1192171},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}