Materials Data on SiC by Materials Project

doi:10.17188/1188302

Title: Materials Data on SiC by Materials Project

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Abstract

SiC is Moissanite-4H structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. there are two inequivalent Si4+ sites. In the first Si4+ site, Si4+ is bonded to four C4- atoms to form corner-sharing SiC4 tetrahedra. All Si–C bond lengths are 1.90 Å. In the second Si4+ site, Si4+ is bonded to four C4- atoms to form corner-sharing SiC4 tetrahedra. There is three shorter (1.89 Å) and one longer (1.90 Å) Si–C bond length. There are two inequivalent C4- sites. In the first C4- site, C4- is bonded to four Si4+ atoms to form corner-sharing CSi4 tetrahedra. In the second C4- site, C4- is bonded to four Si4+ atoms to form corner-sharing CSi4 tetrahedra.

Publication Date:: Thu Jul 23 04:00:00 UTC 2020

Other Number(s):: mp-11714

DOE Contract Number:: AC02-05CH11231

Research Org.:: LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Collaborations:: The Materials Project; MIT; UC Berkeley; Duke; U Louvain

Subject:: 36 MATERIALS SCIENCE; C-Si; SiC; crystal structure

OSTI Identifier:: 1188302

DOI:: https://doi.org/10.17188/1188302

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                    Materials Data on SiC by Materials Project.  United States: N. p., 2020. 
        Web.  doi:10.17188/1188302.

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                    Materials Data on SiC by Materials Project.  United States.  doi:https://doi.org/10.17188/1188302

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                    2020.  
"Materials Data on SiC by Materials Project".  United States.  doi:https://doi.org/10.17188/1188302.  https://www.osti.gov/servlets/purl/1188302. Pub date:Thu Jul 23 04:00:00 UTC 2020

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@article{osti_1188302,

  title        = {Materials Data on SiC by Materials Project},

  
  abstractNote = {SiC is Moissanite-4H structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. there are two inequivalent Si4+ sites. In the first Si4+ site, Si4+ is bonded to four C4- atoms to form corner-sharing SiC4 tetrahedra. All Si–C bond lengths are 1.90 Å. In the second Si4+ site, Si4+ is bonded to four C4- atoms to form corner-sharing SiC4 tetrahedra. There is three shorter (1.89 Å) and one longer (1.90 Å) Si–C bond length. There are two inequivalent C4- sites. In the first C4- site, C4- is bonded to four Si4+ atoms to form corner-sharing CSi4 tetrahedra. In the second C4- site, C4- is bonded to four Si4+ atoms to form corner-sharing CSi4 tetrahedra.},

  doi          = {10.17188/1188302},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {Thu Jul 23 04:00:00 UTC 2020},

  month        = {Thu Jul 23 04:00:00 UTC 2020}

}

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DOI: https://doi.org/10.17188/1188302

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