Materials Data on GaAs by Materials Project

doi:10.17188/1185080

Title: Materials Data on GaAs by Materials Project

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Abstract

GaAs is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. The structure is three-dimensional. Ga3+ is bonded in a linear geometry to two equivalent As3- atoms. Both Ga–As bond lengths are 2.73 Å. As3- is bonded to two equivalent Ga3+ and four equivalent As3- atoms to form a mixture of edge and corner-sharing AsGa2As4 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. There are two shorter (2.71 Å) and two longer (2.72 Å) As–As bond lengths.

Authors:: The Materials Project

Publication Date:: Wed Jul 15 00:00:00 EDT 2020

Other Number(s):: mp-10048

DOE Contract Number:: AC02-05CH11231; EDCBEE

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Collaborations:: MIT; UC Berkeley; Duke; U Louvain

Subject:: 36 MATERIALS SCIENCE

Keywords:: crystal structure; GaAs; As-Ga

OSTI Identifier:: 1185080

DOI:: https://doi.org/10.17188/1185080

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                    The Materials Project. Materials Data on GaAs by Materials Project.  United States: N. p., 2020. 
        Web.  doi:10.17188/1185080.

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                    The Materials Project. Materials Data on GaAs by Materials Project.  United States.  doi:https://doi.org/10.17188/1185080

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                    The Materials Project. 2020.  
"Materials Data on GaAs by Materials Project".  United States.  doi:https://doi.org/10.17188/1185080.  https://www.osti.gov/servlets/purl/1185080. Pub date:Wed Jul 15 00:00:00 EDT 2020

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@article{osti_1185080,

  title        = {Materials Data on GaAs by Materials Project},

  author       = {The Materials Project},

  abstractNote = {GaAs is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. The structure is three-dimensional. Ga3+ is bonded in a linear geometry to two equivalent As3- atoms. Both Ga–As bond lengths are 2.73 Å. As3- is bonded to two equivalent Ga3+ and four equivalent As3- atoms to form a mixture of edge and corner-sharing AsGa2As4 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. There are two shorter (2.71 Å) and two longer (2.72 Å) As–As bond lengths.},

  doi          = {10.17188/1185080},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {Wed Jul 15 00:00:00 EDT 2020},

  month        = {Wed Jul 15 00:00:00 EDT 2020}

}

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DOI: https://doi.org/10.17188/1185080

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