SiC Diode Test Data

doi:10.15121/1157514

Title: SiC Diode Test Data

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Abstract

Fabricated SiC diodes are tested in the temperature range of 300 °C to 600 °C.

Authors:: M., A.

Publication Date:: Fri Aug 01 00:00:00 EDT 2014

Other Number(s):: 441

DOE Contract Number:: FY14 AOP 1.1.5.1

Research Org.:: USDOE Geothermal Data Repository (United States); Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Geothermal Technologies Office

Collaborations:: Sandia National Laboratories

Subject:: 15 Geothermal Energy

Keywords:: geothermal; SiC; diode; test

OSTI Identifier:: 1157514

DOI:: https://doi.org/10.15121/1157514

Citation Formats


                    M., A. SiC Diode Test Data.  United States: N. p., 2014. 
        Web.  doi:10.15121/1157514.

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                    M., A. SiC Diode Test Data.  United States.  doi:https://doi.org/10.15121/1157514

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                    M., A. 2014.  
"SiC Diode Test Data".  United States.  doi:https://doi.org/10.15121/1157514.  https://www.osti.gov/servlets/purl/1157514. Pub date:Fri Aug 01 00:00:00 EDT 2014

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@article{osti_1157514,

  title        = {SiC Diode Test Data},

  author       = {M., A.},

  abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 °C to 600 °C.},

  doi          = {10.15121/1157514},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {Fri Aug 01 00:00:00 EDT 2014},

  month        = {Fri Aug 01 00:00:00 EDT 2014}

}

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DOI: https://doi.org/10.15121/1157514

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