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Title: SiC Diode Test Data

Abstract

Fabricated SiC diodes are tested in the temperature range of 300 °C to 600 °C.

Publication Date:
Other Number(s):
441
DOE Contract Number:  
FY14 AOP 1.1.5.1
Product Type:
Dataset
Research Org.:
DOE Geothermal Data Repository; Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Geothermal Technologies Office
Subject:
15 Geothermal Energy
Keywords:
geothermal; SiC; diode; test
OSTI Identifier:
1157514
DOI:
10.15121/1157514

Citation Formats

M., A. SiC Diode Test Data. United States: N. p., 2014. Web. doi:10.15121/1157514.
M., A. SiC Diode Test Data. United States. doi:10.15121/1157514.
M., A. 2014. "SiC Diode Test Data". United States. doi:10.15121/1157514. https://www.osti.gov/servlets/purl/1157514. Pub date:Fri Aug 01 00:00:00 EDT 2014
@article{osti_1157514,
title = {SiC Diode Test Data},
author = {M., A.},
abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 °C to 600 °C.},
doi = {10.15121/1157514},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {8}
}

Dataset:

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