DOE Data Explorer title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Materials Data on Ga(IO3)3 by Materials Project

Abstract

Ga(IO3)3 crystallizes in the hexagonal P6_3 space group. The structure is three-dimensional. Ga3+ is bonded in an octahedral geometry to six O2- atoms. There are three shorter (2.00 Å) and three longer (2.01 Å) Ga–O bond lengths. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a distorted single-bond geometry to one I5+ atom. The O–I bond length is 1.80 Å. In the second O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one Ga3+ and one I5+ atom. The O–I bond length is 1.89 Å. In the third O2- site, O2- is bonded in a bent 120 degrees geometry to one Ga3+ and one I5+ atom. The O–I bond length is 1.86 Å. I5+ is bonded in a 3-coordinate geometry to three O2- atoms.

Authors:
Publication Date:
Other Number(s):
mp-561104
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Ga(IO3)3; Ga-I-O
OSTI Identifier:
1271816
DOI:
https://doi.org/10.17188/1271816

Citation Formats

The Materials Project. Materials Data on Ga(IO3)3 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1271816.
The Materials Project. Materials Data on Ga(IO3)3 by Materials Project. United States. doi:https://doi.org/10.17188/1271816
The Materials Project. 2020. "Materials Data on Ga(IO3)3 by Materials Project". United States. doi:https://doi.org/10.17188/1271816. https://www.osti.gov/servlets/purl/1271816. Pub date:Mon Jul 20 00:00:00 EDT 2020
@article{osti_1271816,
title = {Materials Data on Ga(IO3)3 by Materials Project},
author = {The Materials Project},
abstractNote = {Ga(IO3)3 crystallizes in the hexagonal P6_3 space group. The structure is three-dimensional. Ga3+ is bonded in an octahedral geometry to six O2- atoms. There are three shorter (2.00 Å) and three longer (2.01 Å) Ga–O bond lengths. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a distorted single-bond geometry to one I5+ atom. The O–I bond length is 1.80 Å. In the second O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one Ga3+ and one I5+ atom. The O–I bond length is 1.89 Å. In the third O2- site, O2- is bonded in a bent 120 degrees geometry to one Ga3+ and one I5+ atom. The O–I bond length is 1.86 Å. I5+ is bonded in a 3-coordinate geometry to three O2- atoms.},
doi = {10.17188/1271816},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jul 20 00:00:00 EDT 2020},
month = {Mon Jul 20 00:00:00 EDT 2020}
}