Radiation-induced segregation of impurities and effects on the electrochemistry of nickel and stainless alloys
- Pacific Northwest Lab., Richland, WA (United States)
- Metal Test, Tacoma, WA (United States)
- Washington State Univ., Richland, WA (United States)
Radiation-induced grain boundary segregation (RIS) of silicon and phosphorus in austenitic stainless steels is established and its influence on. electrochemical behavior investigated. Silicon enrichment increases with irradiation dose for both neutrons and heavy ions. Interfacial concentrations reach about 8 at% after irradiation exposures to 10 dpa. Phosphorus segregates strongly during initial thermal treatment, but no conclusive evidence of further boundary enrichment could be determined after irradiation. These impurities have different effects on the electrochemical behavior of Ni and Fe-Ni-Cr alloys. Silicon additions from 2 to 23 at% improves passivation behavior in the stainless alloys, but as little as 5 at% impairs passivity in nickel where the breakdown potential increased with Si content. Low levels of phosphorus increase passive currents in the stainless alloy, while completely eliminating passivity in nickel. This information is important for LWR core components.
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 99571
- Report Number(s):
- CONF-950304--
- Country of Publication:
- United States
- Language:
- English
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