Highly Stripped Ion Sources for MeV Ion Implantation
Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high charge state phosphorus and antimony could have resulted in a lower power consumption of 30 kW/implanter) for the following reasons (which were discovered after R&D completion): record output of high charge state phosphorous would have thermally damage wafers; record high charge state of antimony requires tool (ion implanting machine in ion implantation jargon) modification, which did not make economic sense due to the small number of users. Nevertheless, BNL has benefited from advances in high-charge state ion generation, due to high charge state ions need for RHIC preinjection. High fraction boron ion was delivered to PVI client Axcelis for retrofit and implantation testing; the source could have reduced beam preinjector power consumption by a factor of 3.5. But, since the source generated some lithium (though in miniscule amounts); last minute decision was made not to employ the source in implanters. R&D of novel transport and gasless plasmaless deceleration, as well as decaborane molecular ion source to mitigate space charge problems in low energy shallow ion implantation was also conducted though results were not yet ready for commercialization. Future work should be focused on gasless plasmaless transport and deceleration as well as on molecular ions due to their significance to low energy, shallow implantation; which is the last frontier of ion implantation. To summarize the significant accomplishments: 1. Record steady state output currents of high charge state phosphorous, P, ions in particle milli-Ampere: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA). 2. Record steady state output currents of high charge state antimony, Sb, ions in particle milli-Ampere: Sb{sup 3+} (16.2 pmA), Sb{sup 4+} (7.6 pmA), Sb{sup 5+} (3.3 pmA), and Sb{sup 6+} (2.2 pmA). 3. 70% output of boron ion current (compared to 25% in present state-of-the-art) from a Calutron-Bemas ion source. These accomplishments have the potential of benefiting the semiconductor manufacturing industry by lowering power consumption by as much as 30 kW per ion implanter. Major problem was meeting commercialization goals did not succeed for the following reasons (which were discovered after R&D completion): record output of high charge state phosphorous would have thermally damage wafers; record high charge state of antimony requires tool (ion implanting machine in ion implantation jargon) modification, which did not make economic sense due to the small number of users. High fraction boron ion was delivered to PVI client Axcelis for retrofit and implantation testing; the source could have reduced beam preinjector power consumption by a factor of 3.5. But, since the source generated some lithium (though in miniscule amounts); last minute decision was made not to employ the source in implanters. An additional noteworthy reason for failure to commercialize is the fact that the ion implantation manufacturing industry had been in a very deep bust cycle. BNL, however, has benefited from advances in high-charge state ion generation, due to the need high charge state ions in some RHIC preinjectors. Since the invention of the transistor, the trend has been to miniaturize semiconductor devices. As semiconductors become smaller (and get miniaturized), ion energy needed for implantation decreases, since shallow implantation is desired. But, due to space charge (intra-ion repulsion) effects, forming and transporting ion beams becomes a rather difficult task. A few small manufacturers of low quality semiconductors use plasma immersion to circumvent the problem. However, in plasma immersion undesired plasma impurity ions are also implanted; hence, the quality of those semiconductors is poor. For high quality miniature semiconductor manufacturing, pure, low energy ion beams are utilized. But, low energy ion implanters are characterized by low current (much lower than desirable) and, therefore, low production rates. Consequently, increasing the current of pure low energy ion beams is of paramount importance to the semiconductor industry. Basically, the semiconductor industry needs higher currents and purer ion low energy beams. Therefore R&D of novel transport and gasless plasmaless deceleration, as well as decaborane molecular ion source to mitigate space charge problems in low energy shallow ion implantation was also conducted though results were not yet ready for commercialization. Future work should be focused on gasless plasmaless transport and deceleration as well as cin molecular ions due to their significance to low energy, shallow implantation, which is the last frontier of ion implantation.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0012704
- OSTI ID:
- 990451
- Report Number(s):
- BNL-94260-2010-CRAD; C-03-09
- Country of Publication:
- United States
- Language:
- English
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