Morphology evolution on diamond surfaces during ion sputtering.

Journal Article · Fri Apr 01 04:00:00 EST 2005 · Proposed for publication in Journal of Vacuum Science and Technology A.

DOI:https://doi.org/10.1116/1.2110386· OSTI ID:990071

Mayer, Thomas Michael; Adams, David Price; Archuleta, Kim M; Vasile, Michael J

We have conducted an extensive study of the evolution of surface morphology of single crystal diamond surfaces during sputtering by 20 keV Ga{sup +} and Ga{sup +} + H{sub 2}O. We observe the formation of well-ordered ripples on the surface for angles of incidence between 40 and 70{sup o}. We have also measured sputter yields as a function of angle of incidence, and ripple wavelength and amplitude dependence on angle of incidence and ion fluence. Smooth surface morphology is observed for <40{sup o}, and a transition to a step-and-terrace structure is observed for >70{sup o}. The formation and evolution of well-ordered surface ripples is well characterized by the model of Bradley and Harper, where sputter-induced roughening is balanced by surface transport smoothing. Smoothing is consistent with an ion-induced viscous relaxation mechanism. Ripple amplitude saturates at high ion fluence, confirming the effect of nonlinear processes. Differences between Ga{sup +} and Ga{sup +} + H{sub 2}O in ripple wavelength, amplitude, and time to saturation of amplitude are consistent with the increased sputter yield observed for Ga{sup +} + H{sub 2}O. For angle of incidence <40{sup o}, an ion bombardment-induced 'atomic drift' mechanism for surface smoothing may be responsible for suppression of ripple formation. For Ga{sup +} + H{sub 2}O, we observe anomalous formation of very large amplitude and wavelength, poorly ordered surface ridges for angle of incidence near 40{sup o}. Finally, we observe that ripple initiation on smooth surfaces can take place by initial stochastic roughening followed by evolution of increasingly well-ordered ripples.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 990071
• Report Number(s): SAND2005-2281J
• Journal Information: Proposed for publication in Journal of Vacuum Science and Technology A., Journal Name: Proposed for publication in Journal of Vacuum Science and Technology A. Journal Issue: 6 Vol. 23; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIAMONDS
GALLIUM IONS
INCIDENCE ANGLE
MONOCRYSTALS
MORPHOLOGY
SPUTTERING
SURFACE PROPERTIES