Effect of threading dislocations on the Bragg peakwidths of GaN, AIGaN, and AIN heterolayers.

Journal Article · Mon Feb 28 23:00:00 EST 2005 · Proposed for publication in Applied Physics Letters.

OSTI ID:989358

Follstaedt, David Martin; Koleske, Daniel David; Lee, Stephen Roger; West, Allen Malone; Waldrip, Karen Elizabeth; Provencio, Paula Polyak; Allerman, Andrew Alan; Abernathy, C R ^[1]

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1. University of Florida, Gainsville, FL

We develop a reciprocal-space model that describes the (hkl) dependence of the broadened Bragg peakwidths produced by x-ray diffraction from a dislocated epilayer. We compare the model to experiments and find that it accurately describes the peakwidths of 16 different Bragg reflections in the [010] zone of both GaN and AlN heterolayers. Using lattice-distortion parameters determined by fitting the model to selected reflections, we estimate threading-dislocation densities for seven different GaN and AlGaN samples and find improved agreement with transmission electron microscopy measurements.

• Research Organization: Sandia National Laboratories
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 989358
• Report Number(s): SAND2005-1848J
• Journal Information: Proposed for publication in Applied Physics Letters., Journal Name: Proposed for publication in Applied Physics Letters. Journal Issue: 24 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BRAGG REFLECTION
DISLOCATIONS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION