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Title: Ternary oxide nanostructures and methods of making same

Abstract

A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.

Inventors:
 [1];  [2]
  1. Stony Brook, NY
  2. Port Jefferson, NY
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
988834
Patent Number(s):
7,585,474
Application Number:
11/581,766
Assignee:
The Research Foundation of State University of New York (Albany, NY) BNL
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Wong, Stanislaus S, and Park, Tae-Jin. Ternary oxide nanostructures and methods of making same. United States: N. p., 2009. Web.
Wong, Stanislaus S, & Park, Tae-Jin. Ternary oxide nanostructures and methods of making same. United States.
Wong, Stanislaus S, and Park, Tae-Jin. Tue . "Ternary oxide nanostructures and methods of making same". United States. https://www.osti.gov/servlets/purl/988834.
@article{osti_988834,
title = {Ternary oxide nanostructures and methods of making same},
author = {Wong, Stanislaus S and Park, Tae-Jin},
abstractNote = {A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 08 00:00:00 EDT 2009},
month = {Tue Sep 08 00:00:00 EDT 2009}
}

Patent:

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