Tilted domain growth of metalorganic chemical vapor (MOCVD)-grown ZnO(0001) on α-Al2O3(0001)

Journal Article · Mon Dec 31 23:00:00 EST 2007 · Journal of Materials Research

DOI:https://doi.org/10.1557/jmr.2008.0026· OSTI ID:985039

Wang, C. M.; Saraf, L. V.; Hubler, T. L.; Nachimuthu, P.

ZnO grown on α-Al2O3 (0001) generally possesses an orientation such that α-Al2O3 (0001)//ZnO(0001) and two in-plane domains nucleate such that: α-Al2O3 [11-20]//ZnO[11-20] and/or α-Al2O3 [11-20]//ZnO[10-10]. In this paper, we report a new growth mode for ZnO grown on α-Al2O3 (0001) using MOCVD. We find that α-Al2O3 [11-20]//ZnO[10-10] but the (0001) plane of ZnO is tilted relative to the (0001) plane of α-Al2O3 such that ZnO(0001) is almost parallel to the α-Al2O3 (-1104) plane. This orientation reduces the extent of lattice mismatch. The interface between ZnO and α-Al2O3 is abrupt and possesses periodic dislocations.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 985039
• Report Number(s): PNNL-SA-56725; 19595; KP1704020
• Journal Information: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 01 Vol. 23; ISSN 0884-2914; ISSN applab
• Publisher: Materials Research Society
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CHEMICAL VAPOR DEPOSITION
DISLOCATIONS
Environmental Molecular Sciences Laboratory
ORIENTATION
SUBSTRATES
ZINC OXIDES