Effects of Active Layer Thickness and Thermal Annealing on Polythiophene: Fullerene Bulk Heterojunction Photovoltaic Devices
The effect of thermal annealing on photovoltaic devices comprising poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) with thicknesses up to 1200 nm was investigated. Without thermal annealing, the efficiency of the as-prepared devices decreased with increasing active layer thickness, reflecting largely a reduction in the short-circuit current density and an inverse photocurrent spectral response. Thermal annealing of the full devices was found to substantially recover thick-film device efficiencies while reducing the thin-film device efficiencies. The profound variations in photovoltaic characteristics were interpreted in terms of vertical phase separation in the P3HT:PCBM blend film and Li+ diffusion from the LiF/Al contact.
- Research Organization:
- Univ. of Rochester, NY (United States). Lab. for Laser Energetics
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC52-08NA28302
- OSTI ID:
- 984847
- Report Number(s):
- DOE/NA/28302-966; 2010-134; 1947
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 5; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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