Strain-mediated metal-insulator transition in epitaxial ultra-thin films of NdNiO{sub 3}.
We have synthesized epitaxial NdNiO3 ultrathin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO3 (001) and LaAlO3 (001), respectively. A combination of x-ray diffraction, temperature dependent resistivity, and soft x-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO3, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 982691
- Report Number(s):
- ANL/XSD/JA-66841
- Journal Information:
- Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: Jun. 7, 2010 Vol. 96; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- ENGLISH
Similar Records
Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO{sub 3} thin films grown by polymer-assisted deposition
Lattice Strain in Epitaxial BaTiO3 Thin Films
The Effect of Strain and Strain Symmetry on the Charge-Order Transition in Bi0.4Ca0.6MnO3 Films
Journal Article
·
Wed Jan 20 23:00:00 EST 2016
· Journal of Applied Physics
·
OSTI ID:22499259
Lattice Strain in Epitaxial BaTiO3 Thin Films
Journal Article
·
Sat Dec 31 23:00:00 EST 2005
· Appl. Phys. Lett.
·
OSTI ID:914234
The Effect of Strain and Strain Symmetry on the Charge-Order Transition in Bi0.4Ca0.6MnO3 Films
Journal Article
·
Mon Dec 31 23:00:00 EST 2007
· Phase Transitions: A Multinational Journal
·
OSTI ID:975059