Effects of Hydrogen Ambient and Film Thickness on ZnO:Al Properties

Conference · Tue Jul 01 04:00:00 EDT 2008

DOI:https://doi.org/10.1116/1.2891261· OSTI ID:981977

Duenow, J N; Gessert, T A; Wood, D M; Dillon, A C; Coutts, T J

Undoped ZnO and ZnO:Al (0.1, 0.2, 0.5, 1.0, and 2.0 wt. % Al{sub 2}O{sub 3}) films were deposited by rf magnetron sputtering. Controlled incorporation of H2 in the Ar sputtering ambient for films grown at substrate temperatures up to 200 C results in mobilities exceeding 50 cm{sup 2} V{sup -1} s{sup -1} when using targets containing 0.1 and 0.2 wt. % Al{sub 2}O{sub 3}. Temperature-dependent Hall measurements show evidence of phonon scattering as the dominant scattering mechanism in these lightly Al-doped films, while ionized impurity scattering appears increasingly dominant at higher doping levels. A combination of compositional and structural analysis shows that hydrogen expands the ZnO lattice normal to the plane of the substrate and desorbs from ZnO at {approx}250C according to temperature-programmed desorption and annealing experiments.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO.
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 981977
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
DESORPTION
FILMS
HYDROGEN
LEVELS
MAGNETRONS
PHONONS
SCATTERING
SPUTTERING
SUBSTRATES
SURFACES
Solar Energy - Photovoltaics
TARGETS
THICKNESS