The Dependence of the Oxidation Enhancement of InP(100) Surface on the Coverage of the Adsorbed Cs
Journal Article
·
· Submitted to Journal of Applied Physics
We report the oxidation of the InP(100) surface promoted by adsorbed Cs by synchrotron radiation photoemission. Oxygen exposure causes reduction of the charge transferred to the InP substrate from Cs and the growth of indium oxide and phosphorous oxide. The oxide growth displays a clear dependence on the Cs coverage. The oxidation of phosphorous is negligible up to 1000 L of O{sub 2} exposure when the Cs coverage is less than half a monolayer (ML), but the formation of the second half monolayer of Cs greatly accelerates the oxidation. This different enhancement of the InP oxidation by the first and the second half monolayer of Cs is due to the double layer structure of the adsorbed Cs atoms, and consequently the higher 6s electron density in the Cs atoms when Cs coverage is larger than 0.5 ML.
- Research Organization:
- SLAC National Accelerator Laboratory (SLAC)
- Sponsoring Organization:
- DOE; Army DAAD19-02-1-0396
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 981689
- Report Number(s):
- SLAC-PUB-14111
- Journal Information:
- Submitted to Journal of Applied Physics, Journal Name: Submitted to Journal of Applied Physics
- Country of Publication:
- United States
- Language:
- English
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