The Impact of the Dielectric/Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors

Journal Article · Tue Jan 01 00:00:00 EST 2008 · ECS Transactions

DOI:https://doi.org/10.1149/1.2908623· OSTI ID:980631

Jung, Y; Kline, R; Lin, E; Fischer, D; Toney, M; Heeney, M; McCulloch, I; DeLongchamp, D

The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTT's high performance can develop well on certain dielectrics, but can be disrupted on others.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
• Sponsoring Organization: Doe - Office Of Science
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 980631
• Report Number(s): BNL-93549-2010-JA; TRN: US201015%%2016
• Journal Information: ECS Transactions, Vol. 13, Issue 2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER MOBILITY
CHARGE CARRIERS
CHEMISTRY
DIELECTRIC MATERIALS
INTERFACES
MICROSTRUCTURE
ORIGIN
PERFORMANCE
ROUGHNESS
SIZE
STOWING
TRANSISTORS
TRANSPORT
WELLS
national synchrotron light source