EPITAXIAL STRAIN CONTROLLED ?CHARGE LEAKAGE? AT LaMnO3 / SrTiO3 INTERFACES

Journal Article · Fri Jan 01 00:00:00 EST 2010 · Advanced Materials

DOI:https://doi.org/10.1002/adma.200902263· OSTI ID:979595

Garcia-Barriocanal, Javier ^[1]; Bruno, Flavio Y. ^[1]; Rivera-Calzada, Alberto ^[1]; Sefrioui, Z. ^[2]; Nemes, Norbert ^[1]; Garcia-Hernandez, M ^[3]; Castro, G. ^[4]; Varela del Arco, Maria ^[5]; Pennycook, Stephen J ^[5]; Leon, C. ^[1]; Santamaria, J. ^[1]

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1. Universidad Complutense, Spain
2. Unite Mixte de Physique CNRS/Thales, Palaiseau, France
3. Instituto de Ciencia de Materiales de Madrid (ICMM)
4. SpLine Spanish CRG Beamline at the ESRF, France
5. ORNL

We report on the charge transfer at the interface between a band (SrTiO3) and a Mott insulator (LaMnO3) in epitaxial superlattices. We have used combined atomic resolution electron microscopy and spectroscopy, synchrotron X ray reciprocal space maps and magneto transport measurements, to characterize the interface properties. The LaMnO3 layers are always started and terminated in (LaO) planes, giving an overall electron doping to the system. However, the direction of charge leakage is determined by the manganite to titanate thickness ratio in a way controlled by the different epitaxial strain patterns. This result may provide a clue to optimize oxide devices such as magnetic tunnel junctions and field effect transistors whose operation is determined by the interface properties.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 979595
• Journal Information: Advanced Materials, Vol. 22, Issue 5
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ELECTRON MICROSCOPY
ELECTRONS
FIELD EFFECT TRANSISTORS
OXIDES
RESOLUTION
SPECTROSCOPY
STRAINS
SUPERLATTICES
SYNCHROTRONS
THICKNESS
TITANATES
TRANSPORT